Results 261 to 270 of about 3,777 (297)

Ir Electrodes for Ferroelectric Capacitors

MRS Proceedings, 1997
ABSTRACTIn this study, Ir/IrO2 mixture electrodes are fabricated by furnace oxidation of sputter deposited Ir, IrO2 and their hybrid electrodes. The characteristics of furnace oxidation of various electrode stems with Ir family and their limitation are investigated. Annealing at higher than 700°C oxidation results in formation of undesirable extrusions
Sung Won Jung, Ilhwan Bang, Jaegab Lee, Jiyoung Kim   +3 more
openaire   +1 more source

Relaxation model for ferroelectric capacitors

31st European Solid-State Device Research Conference, 2001
A ferroelectric capacitor with non saturated polarization state loses its polarisation depending on its previous polarization history in two different ways. Relaxation measures have been performed using SBT capacitors. They show a differrence in polarization relaxation of up to 60% after 100ms, depending on the applied voltage sequence.
G. Le Grand de Mercey, O. Kowarik
openaire   +1 more source

Device modeling of ferroelectric capacitors

Journal of Applied Physics, 1990
A physically based methodology is developed for modeling the behavior of electrical circuits containing nonideal ferroelectric capacitors. The methodology is illustrated by modeling the discrete ferroelectric capacitor as a stacked dielectric structure, with switching ferroelectric and nonswitching dielectric layers. Electrical properties of a modified
S. L. Miller, R. D. Nasby, J. R. Schwank, M. S. Rodgers, P. V. Dressendorfer   +4 more
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A ferroelectric capacitor simulation model

[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics, 2002
The authors have developed a model of the switching mechanism within lead zirconate titanate (PZT) materials that allows accurate reproduction of the change in material polarization with the change in applied field. Changes in the electrical characteristics of the material due to aging, fatigue, and temperature may be reflected by changes in the model ...
J.T. Evans, J.A. Bullington
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Process Degradation of a Ferroelectric Capacitor

MRS Proceedings, 2000
AbstractFerroelectrics used in a memory device such as (Pb,La)(Zr,Ti)O3 (PLZT) are vulnerable to reducing atmosphere and lose remanent polarization easily. In the semiconductor processes, hydrogen gas is generated both from deposition gas of interlayer dielectric and from reaction between metals and moisture in the dielectric.
Seigen Otani, Tetsuro Tamura
openaire   +1 more source

Are ferroelectric multilayers capacitors in series?

Journal of Materials Science, 2015
We show that ferroelectric multilayers are not simple capacitors in series (CIS) and treating these as CIS may lead to misinterpretation of experimental results and to erroneous conclusions. Here, we present a theoretical model of ferroelectric bilayers using basic thermodynamics taking into account the appropriate electrical boundary conditions and ...
F.-C. Sun, M. T. Kesim, Y. Espinal, S. P. Alpay   +3 more
openaire   +1 more source

Damascene processing of ferroelectric capacitors

ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076), 2002
A unique, single-step damascene approach was used to form ferroelectric capacitors with noble metal electrodes. In this study an oxidized Si substrate was coated with a blanket W film and a patterned SiO/sub 2/ film. Capacitors were formed by conformal deposition of a sputtered bottom electrode structure (100 nm Ir/50 nm TiAlN), MOCVD ferroelectric ...
M.W. Russell, D.J. Vestyck, S.M. Bilodeau, L. Nguyen, P.C. Van Buskirk   +4 more
openaire   +1 more source

Ferroelectric capacitors for integrated circuits

Microelectronic Engineering, 1995
The sol-gel processing of a number of ferroelectric films is discussed emphasizing the issues of obtaining electrical properties critical for their applications. The effect of lead excess in solution prepared by the electrochemical techniques on structural and electrical properties of PZT films are discussed.
K.A. Vorotilov, M.I. Yanovskaya, L.I. Solovjeva, A.S. Valeev, V.I. Petrovsky, V.A. Vasiljev, I.E. Obvinzeva   +6 more
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The imprint mechanism in ferroelectric capacitors

Integrated Ferroelectrics, 1995
Abstract The imprint mechanism in ferroelectric capacitors was reported in 1992 by National Semiconductor. In retrospect, that mechanism was visible in the very first memories fabricated at Krysalis Corporation in 1987 but were not recognized as such. Since 1992, new test procedures have been developed at Radiant Technologies, Inc.
Joe T. Evans, Hayley E. Cardoza
openaire   +1 more source

Investigating Dynamic Minor Loop of Ferroelectric Capacitor

2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 2019
In-memory computing with emerging non-volatile memories (NVMs) can accelerate the deep neural networks (DNNs) by parallelizing vector-matrix multiplication (VMM) operations in the analog domain. Hafnium Zirconium Oxide (HZO) based ferroelectric field-effect transistor (FeFET) shows great promise as a synaptic device for neuromorphic computing.
Panni Wang, Zheng Wang, Nujhat Tasneem, Jar Hur, Asif Islam Khan, Shimeng Yu   +5 more
openaire   +1 more source