Results 241 to 250 of about 3,777 (297)

Crystallographic Analysis of a Nonvolatile HZO Phase Shifter Integrated on a Si3N4 Waveguide

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
The nonvolatile resonance shift of an in‐plane HZO phase shifter integrated on a Si3N4 ring resonator is demonstrated through optical measurements under lateral bias. Combining 4D‐STEM with DFT simulations reveals phase redistribution and strain‐induced index changes as the microscopic origin of a nonvolatile photonic modulation.
Minsik Kong, Min Kang, Chanwoo Jeong, Kyuho Kim, Sunkyu Yu, Soo‐Yeon Lee   +5 more
wiley   +1 more source

High-Entropy Chemical Composition Design for Ultrahigh Capacitive Energy Storage. [PDF]

Adv Sci (Weinh)
Habib M, Wang H, Fang W, Rahman A, Rehman MU, Wang T, Zhu Q, Iqbal MJ, Shi X, Qi H, Gong W.   +10 more
europepmc   +1 more source

Nonlinear Strain‐Mediated Magnetoelectric Coupling in Sub‐Microscale Ni/BPZT Thin‐Film Devices

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
Sub‐micrometer Ni/BPZT thin‐film magnetoelectric devices with lateral gates enable localized, low‐voltage strain control of magnetization. By combining anisotropic magnetoresistance, nitrogen‐vacancy magnetometry, multiphysics strain simulations, and micromagnetic modelling, the study quantitatively links ferroelectric strain hysteresis to magnetic ...
Fanfan Meng, Emma Van Meirvenne, Federica Luciano, Xiangyu Wu, Yves Deblock, Kaustuv Banerjee, Peter Rickhaus, Florin Ciubotaru, Christoph Adelmann   +8 more
wiley   +1 more source

Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors. [PDF]

Nat Commun
Rhee D, Kim KH, Zheng J, Song S, Peng LM, Olsson RH, Kang J, Jariwala D.   +7 more
europepmc   +1 more source

Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor. [PDF]

Adv Mater
Kim KD, Yeom MK, Park HS, Jeon G, Hwang CS.   +4 more
europepmc   +1 more source

Colossal and tunable dielectric tunability in domain-engineered barium strontium titanate. [PDF]

Nat Commun
Chen D, Nisnevich S, Wu L, Gu Z, Carroll J, Jiang Y, Meyers CJG, Coleman K, Hanrahan BM, Martin LW, Grinberg I, Spanier JE.   +11 more
europepmc   +1 more source

In-memory ferroelectric differentiator. [PDF]

Nat Commun
Feng G, Zhao X, Huang X, Zhang X, Wang Y, Li W, Chen L, Hao S, Zhu Q, Ivry Y, Dkhil B, Tian B, Zhou P, Chu J, Duan C.   +14 more
europepmc   +1 more source

Van Der Waals Ferroionic CuInP₂S₆: Emergent Properties and Device Application. [PDF]

Materials (Basel)
Li M, Peng Z, Zhang D, Wang X, Yang W, Liang Z, Jiang X.   +6 more
europepmc   +1 more source

Fabrication and Characterization of Ferroelectric Capacitors with a Symmetric Hybrid TiN/W/HZO/W/TiN Electrode Structure. [PDF]

Materials (Basel)
Kim HJ, Choi JH, Lee SE, Kim SW, Lee HC.
europepmc   +1 more source

Negative capacitance in a ferroelectric capacitor

Nature Materials, 2014
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far ...
Asif Islam Khan, Korok Chatterjee, Long You   +2 more
exaly   +4 more sources