Results 281 to 290 of about 9,574,825 (357)
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Ferroelectric properties of colemanite

Inorganic Materials, 2006
The electrical conductivity, dielectric permittivity, and loss tangent of colemanite single crystals are measured as functions of temperature, and the fractal scaling law exponent is evaluated. The origin of the colossal dielectric response of hydrogen-bonded crystals is discussed.
N. D. Gavrilova   +2 more
openaire   +1 more source

Ferroelectric properties of PbTiO3

Physica, 1962
Abstract A new method for growing single crystals of ferroelectric PbTiO3 is described. A mixture of TiO2, Pb3O4 and KF in the ratio 1 : 2.5 : 6.5 is taken in a platinum crucible and heated to a temperature of about 900°C to 950°C for about 20 hours. The melt is then slowly cooled to room temperature.
V.G. Bhide, K.G. Deshmukh, M.S. Hegde
openaire   +1 more source

MECHANICAL PROPERTIES OF FERROELECTRIC CERAMIC NANOCOMPOSITES

International Journal of Nanoscience, 2005
The micro- and nano-indentation techniques and compression tests were employed to determine the mechanical properties of PZT based composites dispersed with Al 2 O 3 nano-particles for comparison. Compared with the reduced modulus, the nano-hardness, which exhibited indentation size effect (ISE), seemed to be more sensitive to the indentation depth ...
Wang, XX, Kwok, KW, Lee, KL, Kah Soh, AK
openaire   +4 more sources

Superior comprehensive energy storage properties in Bi0.5Na0.5TiO3-based relaxor ferroelectric ceramics

Chemical Engineering Journal, 2020
Seeking for high energy storage materials has become an urgent task in the circumstance of energy crisis. In this work, a series of relaxor ferroelectrics (1 − x)Bi0.5Na0.5TiO3-xSr0.7La0.2TiO3 ((1 − x)BNT-xSLT) with excellent energy storage performance ...
Xiaoshuang Qiao   +9 more
semanticscholar   +1 more source

Low-temperature thermal properties of ferroelectrics

Physical Review B, 1985
Through measurements of the low-temperature thermal conductivity and specific heat, we show that two classes of ferroelectrics can be distinguished. One class exhibits behavior typical of crystalline solids and the other displays behavior identical to that seen in structural glasses.
, De Yoreo JJ, , Pohl, , Burns
openaire   +2 more sources

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

IEEE Electron Device Letters, 2019
The ferroelectricity of Hf0.5Zr0.5O2 (HZO) thin films has been usually reported to be induced by metallic capping layer. In this work, we successfully obtained ferroelectricity of HZO thin films induced by ultrathin insulating Al2O3 capping layers.
Jiali Wang   +14 more
semanticscholar   +1 more source

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

IEEE Electron Device Letters, 2018
In this letter, effects of top electrodes (TEs) on ferroelectric properties of Hf0.5 Zr0.5 O2 (HZO) thin films are examined systematically. The remnant polarization (Pr) of HZO thin films increases by altering TEs with lower thermal expansions ...
Rongrong Cao   +9 more
semanticscholar   +1 more source

Optical Properties and Model of Relaxor Ferroelectrics

Ferroelectrics, 2003
Phenomenological approach to a relaxor theory is developed and some experi-mental results in the support of this theory are received. The optical absorption spectrum, luminescent emission and photoconductivity are investigated in the wide temperature region in PbMg 1/3 Nb 2/3 O 3 .
Mamin R.   +4 more
openaire   +3 more sources

Luminescence and Optical Properties of Relaxor Ferroelectrics

Ferroelectrics, 2005
The optical absorption spectrum, luminescence and photoconductivity on single crystals PbMg1/3Nb2/3O3 and on ceramics Pb0.91La0.09(Zr0.65Ti0.35)O 3 are investigated in the wide temperature range. The luminescence spectrum correlates with the photoconductivity spectrum.
Zverev D.   +6 more
openaire   +3 more sources

Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films

IEEE Electron Device Letters, 2019
Ferroelectric materials with a perovskite structure have various shortcomings, including poor Si compatibility, large physical thickness, and small bandgap. HfO2-based ferroelectric materials provide a new solution for ferroelectric semiconductor devices.
Q. Luo   +17 more
semanticscholar   +1 more source

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