Results 281 to 290 of about 9,574,825 (357)
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Ferroelectric properties of colemanite
Inorganic Materials, 2006The electrical conductivity, dielectric permittivity, and loss tangent of colemanite single crystals are measured as functions of temperature, and the fractal scaling law exponent is evaluated. The origin of the colossal dielectric response of hydrogen-bonded crystals is discussed.
N. D. Gavrilova +2 more
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Ferroelectric properties of PbTiO3
Physica, 1962Abstract A new method for growing single crystals of ferroelectric PbTiO3 is described. A mixture of TiO2, Pb3O4 and KF in the ratio 1 : 2.5 : 6.5 is taken in a platinum crucible and heated to a temperature of about 900°C to 950°C for about 20 hours. The melt is then slowly cooled to room temperature.
V.G. Bhide, K.G. Deshmukh, M.S. Hegde
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MECHANICAL PROPERTIES OF FERROELECTRIC CERAMIC NANOCOMPOSITES
International Journal of Nanoscience, 2005The micro- and nano-indentation techniques and compression tests were employed to determine the mechanical properties of PZT based composites dispersed with Al 2 O 3 nano-particles for comparison. Compared with the reduced modulus, the nano-hardness, which exhibited indentation size effect (ISE), seemed to be more sensitive to the indentation depth ...
Wang, XX, Kwok, KW, Lee, KL, Kah Soh, AK
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Chemical Engineering Journal, 2020
Seeking for high energy storage materials has become an urgent task in the circumstance of energy crisis. In this work, a series of relaxor ferroelectrics (1 − x)Bi0.5Na0.5TiO3-xSr0.7La0.2TiO3 ((1 − x)BNT-xSLT) with excellent energy storage performance ...
Xiaoshuang Qiao +9 more
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Seeking for high energy storage materials has become an urgent task in the circumstance of energy crisis. In this work, a series of relaxor ferroelectrics (1 − x)Bi0.5Na0.5TiO3-xSr0.7La0.2TiO3 ((1 − x)BNT-xSLT) with excellent energy storage performance ...
Xiaoshuang Qiao +9 more
semanticscholar +1 more source
Low-temperature thermal properties of ferroelectrics
Physical Review B, 1985Through measurements of the low-temperature thermal conductivity and specific heat, we show that two classes of ferroelectrics can be distinguished. One class exhibits behavior typical of crystalline solids and the other displays behavior identical to that seen in structural glasses.
, De Yoreo JJ, , Pohl, , Burns
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Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer
IEEE Electron Device Letters, 2019The ferroelectricity of Hf0.5Zr0.5O2 (HZO) thin films has been usually reported to be induced by metallic capping layer. In this work, we successfully obtained ferroelectricity of HZO thin films induced by ultrathin insulating Al2O3 capping layers.
Jiali Wang +14 more
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Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
IEEE Electron Device Letters, 2018In this letter, effects of top electrodes (TEs) on ferroelectric properties of Hf0.5 Zr0.5 O2 (HZO) thin films are examined systematically. The remnant polarization (Pr) of HZO thin films increases by altering TEs with lower thermal expansions ...
Rongrong Cao +9 more
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Optical Properties and Model of Relaxor Ferroelectrics
Ferroelectrics, 2003Phenomenological approach to a relaxor theory is developed and some experi-mental results in the support of this theory are received. The optical absorption spectrum, luminescent emission and photoconductivity are investigated in the wide temperature region in PbMg 1/3 Nb 2/3 O 3 .
Mamin R. +4 more
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Luminescence and Optical Properties of Relaxor Ferroelectrics
Ferroelectrics, 2005The optical absorption spectrum, luminescence and photoconductivity on single crystals PbMg1/3Nb2/3O3 and on ceramics Pb0.91La0.09(Zr0.65Ti0.35)O 3 are investigated in the wide temperature range. The luminescence spectrum correlates with the photoconductivity spectrum.
Zverev D. +6 more
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Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films
IEEE Electron Device Letters, 2019Ferroelectric materials with a perovskite structure have various shortcomings, including poor Si compatibility, large physical thickness, and small bandgap. HfO2-based ferroelectric materials provide a new solution for ferroelectric semiconductor devices.
Q. Luo +17 more
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