Results 41 to 50 of about 63,457 (174)

Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance

Nanomaterials, 2021
It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors.
Maksim A. Pavlenko, Yuri A. Tikhonov, Anna G. Razumnaya, Valerii M. Vinokur, Igor A. Lukyanchuk   +4 more
doaj   +1 more source

Recent progress in first-principles studies of magnetoelectric multiferroics

, 2005
Materials that combine magnetic and ferroelectric properties have generated increasing interest over the last few years, due to both their diverse properties and their potential utility in new types of magnetoelectric device applications.
Anderson, Anisimov, Anisimov, Baettig, Baettig, Bai, Bokov, Bungaro, Choi, Claude Ederer, Cohen, Cohen, dos Santos, dos Santos, Ederer, Ederer, Ederer, Eerenstein, Fennie, Fennie, Fiebig, Fiebig, Filippetti, Filippetti, Filippetti, Fischer, Ghosez, Goodenough, Haeni, Hemberger, Hill, Hill, Hill, Hill, Hill, Hur, Jones, Kimura, Kimura, King-Smith, Kiselev, Li, Lottermoser, Martin, Medvedeva, Moriya, Neaton, Neaton, Nicola A. Spaldin, Niitaka, Palkar, Perdew, Qi, Qian, Resta, Schmid, Schmid, Schmid, Seshadri, Shishidou, Skinner, Smolenskii, Solovyev, Sosnowska, Spaldin, Sugawara, Teague, Terakura, Ueda, Ueda, van Aken, van Aken, Vanderbilt, Wang, Wang, Xu, Yakel, Yun, Zheng   +78 more
core   +1 more source

Strong-correlation effects in Born effective charges

, 2003
Large values of Born effective charges are generally considered as reliable indicators of the genuine tendency of an insulator towards ferroelectric instability.
A. Filippetti, A. Filippetti, A. Svane, A. Svane, A.B. Shick, Alessio Filippetti, B.B. Van Aken, C. Sgiaroviello, D. Vanderbilt, D. Vogel, D. Vogel, D. Vogel, F. Bernardini, F. Bernardini, G. Zampieri, G.A. Sawatzky, H.L. Yakel, I.V. Solovyev, J.C. Phillips, J.D. Axe, J.P. Perdew, J.P. Perdew, J.Y. Raty, K. Laasonen, K. Terakura, K.M. Rabe, L.T. Hudson, M. Posternak, N. Fujimura, Nicola A. Spaldin, O. Bengone, O. Gunnarsson, P. Umari, Ph. Ghosez, Ph. Ghosez, Ph. Ghosez, R. Resta, R. Resta, R. Resta, R. Resta, R. Resta, R. Resta, R. Resta, R. Resta, R. Zimmermann, R.D. King-Smith, R.E. Cohen, R.E. Cohen, S. Baroni, S. Ishihara, S. Ishihara, S. Massidda, S.H. Wemple, T. Egami, U.V. Waghmare, V.I. Anisimov, W. Zhong, X. Gonze, X. Gonze, X. Gonze   +59 more
core   +1 more source

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Nano Convergence, 2023
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as
Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park   +7 more
doaj   +1 more source

Size effects and depolarization field influence on the phase diagrams of cylindrical ferroelectric nanoparticles

, 2006
Ferroelectric nanoparticles of different shape and their nanocomposites are actively studied in modern physics. Because of their applications in many fields of nanotechnology, the size effects and the possible disappearance of ferroelectricity at a ...
Anna N. Morozovska, Erdelyi, Eugene A. Eliseev, Fong, Freund, Glinchuk, Glinchuk, Glinchuk, Glinchuk, Huang, Jaffe, Kretschmer, Landau, Lines, Luo, Ma, Maya D. Glinchuk, Mishina, Mishra, Morrison, Pertsev, Rychetsky, Speck, Strukov, Tilley, Uchino, Wang, Yadlovker   +27 more
core   +1 more source

Tailoring the Functional Properties of Ferroelectric Perovskite Thin Films: Mechanisms of Dielectric and Photoelectrochemical Enhancement

Crystals
Various types of strain, as well as chemical pressure induced by dopants, can effectively tailor the performance of perovskite thin films, including their optical, electrical or photoelectrochemical properties.
Ioan-Mihail Ghitiu, George Alexandru Nemnes, Nicu Doinel Scarisoreanu   +2 more
doaj   +1 more source

Anisotropic in-plane dielectric and ferroelectric properties of tensile-strained BaTiO3 films with three different crystallographic orientations

AIP Advances, 2021
Ferroelectric properties of films can be tailored by strain engineering, but a wider space for property engineering can be opened by including crystal anisotropy.
Trygve M. Raeder, Theodor S. Holstad, Inger-Emma Nylund, Mari-Ann Einarsrud, Julia Glaum, Dennis Meier, Tor Grande   +6 more
doaj   +1 more source

Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2

Communications Physics, 2022
HfO2-based ferroelectric materials have immense technological potential and so significant attention has been given to improve the ferroelectric properties at low-thickness.
Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Laura Bégon-Lours, Cosmin Istrate, Lucian Pintilie, Athanasios Dimoulas   +7 more
doaj   +1 more source

Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films

, 2000
We study the domain structure in ferroelectric thin films with a `passive' layer (material with damaged ferroelectric properties) at the interface between the film and electrodes within a continuous medium approximation.
A. Gruverman, A. Hubert, A. K. Kholkin, A. K. Tagantsev, A. Kopal, A. M. Bratkovsky, A. P. Levanyuk, B. A. Strukov, C. Kittel, D. J. Taylor, D. M. Smyth, E. V. Chensky, E. V. Chensky, H. F. Kay, H. M. Duiker, L. D. Landau, M. E. Drougard, P. W. Blom, R. Landauer, S. B. Desu, S. L. Miller, T. Mitsui, V. Janovec, V. V. Lemanov, V. V. Lemanov, Y. Watanabe, Y. Watanabe   +26 more
core   +1 more source

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

AIP Advances, 2016
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility.
S. Riedel, P. Polakowski, J. Müller
doaj   +1 more source