Results 51 to 60 of about 8,506,464 (324)

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

Advanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng, Ying Liu, Jialin Gong, Yalong Jiao, Xiaoming Zhang, Wenxian Li, Zhenxiang Cheng, Tie Yang   +7 more
wiley   +1 more source

Anisotropic in-plane dielectric and ferroelectric properties of tensile-strained BaTiO3 films with three different crystallographic orientations

AIP Advances, 2021
Ferroelectric properties of films can be tailored by strain engineering, but a wider space for property engineering can be opened by including crystal anisotropy.
Trygve M. Raeder, Theodor S. Holstad, Inger-Emma Nylund, Mari-Ann Einarsrud, Julia Glaum, Dennis Meier, Tor Grande   +6 more
doaj   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Tailoring the Functional Properties of Ferroelectric Perovskite Thin Films: Mechanisms of Dielectric and Photoelectrochemical Enhancement

Crystals
Various types of strain, as well as chemical pressure induced by dopants, can effectively tailor the performance of perovskite thin films, including their optical, electrical or photoelectrochemical properties.
Ioan-Mihail Ghitiu, George Alexandru Nemnes, Nicu Doinel Scarisoreanu   +2 more
doaj   +1 more source

Tuning of the depolarization field and nanodomain structure in ferroelectric thin films

, 2014
The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films.
Fernandez-Pena, Stéphanie, Lichtensteiger, Céline, Triscone, Jean-Marc, Weymann, Christian, Zubko, Pavlo   +4 more
core   +2 more sources

Two‐Dimensional Materials as a Multiproperty Sensing Platform

Advanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana, Shubhrasish Mukherjee, Dmitrii Litvinov, Magdalena Grzeszczyk, Sergey Grebenchuk, Makars Šiškins, Virgil Gavriliuc, Yihang Ouyang, Changyi Chen, Yuxuan Ye, Meng Yiming, Maciej Koperski   +11 more
wiley   +1 more source

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

AIP Advances, 2016
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility.
S. Riedel, P. Polakowski, J. Müller
doaj   +1 more source

Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2

Communications Physics, 2022
HfO2-based ferroelectric materials have immense technological potential and so significant attention has been given to improve the ferroelectric properties at low-thickness.
Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Laura Bégon-Lours, Cosmin Istrate, Lucian Pintilie, Athanasios Dimoulas   +7 more
doaj   +1 more source

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx

IEEE Journal of the Electron Devices Society, 2018
We experimentally demonstrate that hysteresis of negative capacitance (NC) Ge pFETs is reduced through modulating the ferroelectric properties in HfZrOx (HZO) by changing the post annealing temperature. As annealing temperature varies from 350 °C to 450 °
Jiuren Zhou, Yue Peng, G. Han, Qinglong Li, Yan Liu, Jincheng Zhang, M. Liao, Qingqing Sun, David-Wei Zhang, Yichun Zhou, Y. Hao   +10 more
semanticscholar   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source