Results 51 to 60 of about 63,457 (174)
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini +11 more
doaj +1 more source
FERROELECTRIC PROPERTIES OF BARIUM TITANATE
The paper presents various physical properties of barium titanate. The ferroelectric properties of this dielectric have been studied.
Umidjon Sobirjonovich Ismoilov +2 more
openaire +1 more source
Low temperature growth of epitaxial ferroelectric BaTiO3
BaTiO3 exhibits several functional properties, such as high dielectric constant, large Pockels coefficient, and strong ferroelectricity/piezoelectricity.
Yeong Jae Shin +4 more
doaj +1 more source
The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3.
Yuyang Wu +11 more
doaj +1 more source
We report first principles density functional perturbation theory calculations and inelastic neutron scattering measurements of the phonon density of states, dispersion relations and electromechanical response of PbTiO3, BaTiO3 and SrTiO3.
A. W. Hewat +10 more
core +1 more source
Rotor lattice model of ferroelectric large polarons
We present a minimal model of ferroelectric large polarons, which are suggested as one of the mechanisms responsible for the unique charge transport properties of hybrid perovskites. We demonstrate that short-ranged charge–rotor interactions lead to long-
Georgios M. Koutentakis +2 more
doaj +1 more source
Intertwined Rashba, Dirac and Weyl Fermions in Hexagonal Hyperferroelectrics
By means of density functional theory based calculations, we study the role of spin-orbit coupling in the new family of ABC hyperferroelectrics [Phys. Rev. Lett. 112, 127601 (2014)].
Barone, Paolo +5 more
core +1 more source
Ferroelectric characterization and growth optimization of thermally evaporated vinylidene fluoride thin films [PDF]
Organic thin films have numerous advantages over inorganics in device processing and price. The large polarization of the organic ferroelectric oligomer vinylidene fluoride (VDF) could prove useful for both device applications and the investigation of ...
Adenwalla, Shireen +5 more
core +1 more source
In this concept paper, the development of strategies for the integration of first-principles methods with crystallographic database mining for the discovery and design of novel ferroelectric materials is discussed, drawing on the results and experience ...
Abrahams +76 more
core +1 more source
Theory of PbTiO3, BaTiO3, and SrTiO3 Surfaces
First-principles total-energy calculations are carried out for (001) surfaces of the cubic perovskite ATiO3 compounds PbTiO3, BaTiO3, and SrTiO3. Both AO-terminated and TiO2-terminated surfaces are considered, and fully-relaxed atomic configurations are ...
Meyer, B. +2 more
core +2 more sources

