Results 91 to 100 of about 204,595 (365)
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting.
Fucai Liu+16 more
semanticscholar +1 more source
Recipes for improper ferroelectricity in molecular perovskites
In layered inorganic materials lattice distortions can couple to break inversion symmetry and drive improper ferroelectricity, but in perovskites, symmetry prohibits such an effect.
Hanna L. B. Boström+2 more
doaj +1 more source
Hydrogen in Ferroelectrics [PDF]
It is well known that the ferroelectric random access memories (FRAM) as one of the most important applications of ferroelectric thin film have attracted much attention. However, the introduction of hydrogen into ferroelectric materials may cause severe degradations in dielectric properties, ferroelectric properties, optical properties and mechanical ...
H. Y. Huang, Li-Jie Qiao, Yan-Jing Su
openaire +3 more sources
Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
AbstractTo address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van
Sungpyo Baek+9 more
openaire +3 more sources
Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics
Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang+14 more
wiley +1 more source
We investigate the effect of $A$-site size differences in the double perovskites BiScO$_3$-$M$NbO$_3$ ($M$$=$Na, K and Rb) using first-principles calculations.
Cooper, V. R.+3 more
core +1 more source
Ferroelectric negative capacitance [PDF]
The capacitor is a key element of electronic devices and is characterized by positive capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases and implies a local voltage drop opposed to the overall applied bias. Therefore, a local NC response results in voltage enhancement across the rest of the circuit. Within a suitably
Igor A. Luk'yanchuk+4 more
openaire +4 more sources
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du+11 more
wiley +1 more source
Terahertz field–induced ferroelectricity in quantum paraelectric SrTiO3 [PDF]
Driving strontium titanate ferroelectric Hidden phases are metastable collective states of matter that are typically not accessible on equilibrium phase diagrams. Nova et al.
Xian Li+6 more
semanticscholar +1 more source
An equivalent dipole analysis of PZT ceramics and lead-free piezoelectric single crystals [PDF]
The recently proposed Equivalent Dipole Model for describing the electromechanical properties of ionic solids in terms of 3 ions and 2 bonds has been applied to PZT ceramics and lead-free single crystal piezoelectric materials, providing analysis in ...
Andrew J. Bell
doaj +1 more source