Results 171 to 180 of about 21,239 (224)

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

Advanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio, Rikhard Ranta, Sayani Majumdar   +2 more
wiley   +1 more source

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO₂ Deposited by RF Plasma Sputter. [PDF]

Nanomaterials (Basel)
Lim S, Ahn Y, Won B, Lee S, Park H, Kumar M, Seo H.   +6 more
europepmc   +1 more source

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

Advanced Electronic Materials, EarlyView.
The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng, Wei‐Ning Kao, Yu‐Hsing Chen, Yung‐Hsien Wu   +3 more
wiley   +1 more source

Ambient Moisture-Induced Self Alignment of Polarization in Ferroelectric Hafnia. [PDF]

Adv Sci (Weinh)
Wei LQ, Guan Z, Tong WY, Fan WC, Mattursun A, Chen BB, Xiang PH, Han G, Duan CG, Zhong N.   +9 more
europepmc   +1 more source

Wearable PZT Piezoelectric Sensor Device for Accurate Arterial Pressure Pulse Waveform Measurement

Advanced Electronic Materials, EarlyView.
This work presents a wearable device for the non‐invasive measurement of radial arterial pressure pulse waveforms, incorporating a highly sensitive flexible Lead Zirconate Titanate (PZT) piezoelectric sensor and an optimized tightness‐free attachment method to maximize the sensitivity.
Minyu Li, Jun Aoyama, Koya Inayoshi, Hedong Zhang   +3 more
wiley   +1 more source

Improved Ferroelectric and Magnetic Properties of Bismuth Ferrite-Based Ceramics by Introduction of Non-Isovalent Ions and Grain Engineering. [PDF]

Nanomaterials (Basel)
Wang T, Ye H, Wang X, Cui Y, Mei H, Song S, Zhao Z, Wang M, Rosaiah P, Ma Q.   +9 more
europepmc   +1 more source

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Advanced Electronic Materials, EarlyView.
The defects in the charge‐trapping layer are believed to be responsible for endurance degradation in organic transistor nonvolatile memory (ONVM). The ONVM employing thermally treated n‐type semiconductor as the charge‐storage layer can maintain prolonged stable endurance for up to 104 cycles through annealing the charge‐trapping layer, paving the way ...
Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu   +8 more
wiley   +1 more source

Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires. [PDF]

Nat Commun
Zhang J, Zhang J, Qi Y, Gong S, Xu H, Liu Z, Zhang R, Sadi MA, Sychev D, Zhao R, Yang H, Wu Z, Cui D, Wang L, Ma C, Wu X, Gao J, Chen YP, Wang X, Jiang Y.   +19 more
europepmc   +1 more source

Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control

Advanced Electronic Materials, EarlyView.
Left: Polarization hysteresis (P‐E) characteristics of 200 nm wurtzite‐type Al0.73Sc0.27N without (ref. Nmix = 0) and with O‐doping (Nmix = 8 and 15), showing a clear drop of leakage current with O‐doping. Right: Piezoresponse for microscopy showing the as‐deposited polarization reversal from nitrogen (Nmix = 0) to metal polarity (Nmix = 15) via mixed ...
Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom‐Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu‐Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle   +11 more
wiley   +1 more source

Experimental demonstration of tunable hybrid improper ferroelectricity in double-perovskite superlattice films. [PDF]

Nat Commun
Jiang Y, Niu J, Wang C, Xue D, Shi X, Gao W, Zhao S.   +6 more
europepmc   +1 more source