Results 231 to 240 of about 191,721 (336)

Tunneling‐Controlled Fusion of Short‐ and Long‐Term Memory in SiO2/HfO2‐Based Neuromorphic Device for Time‐Series Prediction

open access: yesAdvanced Science, EarlyView.
Based on trap‐assisted tunneling, the devices can fuse STM/LTM, where the low switching energy of 1 pJ and stable low‐power retention (0.2 % loss ratio and 3.05 × 10−11 W) is achieved. Training in a long short‐term memory network it allows to analysis time‐series data and then makes precise long‐term predictions with an error ratio of 4.465 ...
Chengdong Yang   +3 more
wiley   +1 more source

Graphene field - effect transistors on ferroelectric substrates

open access: green, 2016
Andrei Vorobiev   +4 more
openalex   +1 more source

Displacive In‐Plane Ferroelectricity with Domain‐Specific Curie Temperature in Van der Waals Semiconductors

open access: yesAdvanced Science, EarlyView.
Temperature‐dependent electron diffraction on tin monochalcogenides demonstrates a gradual displacive transformation between ferroelectric and paraelectric phases with significant variability in lattice constants and Curie temperature (TC). Periodic variations exist even between domains in individual crystals, implying a domain‐specific Curie ...
Peter Sutter, Eli Sutter
wiley   +1 more source

Unique Pathwaysof Sliding Ferroelectricity in Few-LayeredSnP2Se6 with Ultrahigh Carrier Mobility: A First-PrinciplesStudy

open access: green
Haixuan Liu (11478762)   +7 more
openalex   +1 more source

Kinetic Understanding of Field-Induced Phase Transition from Tetragonal to Ferroelectric Orthorhombic Phase in Ferroelectric CeO<sub>2</sub>-HfO<sub>2</sub>-ZrO<sub>2</sub> Films. [PDF]

open access: yesACS Appl Electron Mater
Shimonosono K   +13 more
europepmc   +1 more source

Giant Polar Displacements via Strain Relaxation in Itinerant Ferromagnet SrRuO3 Freestanding Films

open access: yesAdvanced Science, EarlyView.
The discovery of substantial Ru off‐centre displacements exceeding 30 pm in SrRuO3 freestanding films is reported, achieved by properly controlling the strain relaxation process to engineer an expanded lattice. The work shows that tailored strain relaxation strategies can be used to design magnetic polar metals with desired electronic states in ...
Xingcan Zhou   +12 more
wiley   +1 more source

Hole-doping-assisted epitaxial growth of wafer-scale rhombohedral-stacked bilayer transition-metal dichalcogenides single crystals. [PDF]

open access: yesNat Commun
Sun H   +17 more
europepmc   +1 more source

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

open access: yesAdvanced Science, EarlyView.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena   +10 more
wiley   +1 more source

A ferroelectric–memristor memory for both training and inference [PDF]

open access: hybrid
Michele Martemucci   +11 more
openalex   +1 more source

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