Results 231 to 240 of about 191,721 (336)
Based on trap‐assisted tunneling, the devices can fuse STM/LTM, where the low switching energy of 1 pJ and stable low‐power retention (0.2 % loss ratio and 3.05 × 10−11 W) is achieved. Training in a long short‐term memory network it allows to analysis time‐series data and then makes precise long‐term predictions with an error ratio of 4.465 ...
Chengdong Yang +3 more
wiley +1 more source
Graphene field - effect transistors on ferroelectric substrates
Andrei Vorobiev +4 more
openalex +1 more source
Ferroelectric Topological Defects in Hexagonal Manganites. [PDF]
Gao Z, Cheong SW, Wang X.
europepmc +1 more source
Temperature‐dependent electron diffraction on tin monochalcogenides demonstrates a gradual displacive transformation between ferroelectric and paraelectric phases with significant variability in lattice constants and Curie temperature (TC). Periodic variations exist even between domains in individual crystals, implying a domain‐specific Curie ...
Peter Sutter, Eli Sutter
wiley +1 more source
Kinetic Understanding of Field-Induced Phase Transition from Tetragonal to Ferroelectric Orthorhombic Phase in Ferroelectric CeO<sub>2</sub>-HfO<sub>2</sub>-ZrO<sub>2</sub> Films. [PDF]
Shimonosono K +13 more
europepmc +1 more source
Giant Polar Displacements via Strain Relaxation in Itinerant Ferromagnet SrRuO3 Freestanding Films
The discovery of substantial Ru off‐centre displacements exceeding 30 pm in SrRuO3 freestanding films is reported, achieved by properly controlling the strain relaxation process to engineer an expanded lattice. The work shows that tailored strain relaxation strategies can be used to design magnetic polar metals with desired electronic states in ...
Xingcan Zhou +12 more
wiley +1 more source
Hole-doping-assisted epitaxial growth of wafer-scale rhombohedral-stacked bilayer transition-metal dichalcogenides single crystals. [PDF]
Sun H +17 more
europepmc +1 more source
A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena +10 more
wiley +1 more source
A ferroelectric–memristor memory for both training and inference [PDF]
Michele Martemucci +11 more
openalex +1 more source

