Results 41 to 50 of about 76,083 (289)

Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit

Nature Communications, 2019
It is difficult to maintain ferroelectricity in the two dimensional limit. Here, the authors report robust room-temperature ferroelectricity in the thinnest monolayer MoTe2 due to relative atomic displacements of Mo and Te atoms.
Shuoguo Yuan, Xin Luo, Hung Lit Chan, Chengcheng Xiao, Yawei Dai, Maohai Xie, Jianhua Hao   +6 more
doaj   +1 more source

Direct Epitaxial Growth of Polar Hf_0.5Zr_0.5O₂ Films on Corundum

Nanomaterials, 2022
Single-phase epitaxial Hf0.5Zr0.5O2 films with non-centrosymmetric orthorhombic structure have been grown directly on electrode-free corundum (α-Al2O3) substrates by pulsed laser deposition.
Eduardo Barriuso, Panagiotis Koutsogiannis, David Serrate, Javier Herrero-Martín, Ricardo Jiménez, César Magén, Miguel Algueró, Pedro A. Algarabel, José A. Pardo   +8 more
doaj   +1 more source

Ferroelectricity at ferroelectric domain walls

, 2013
10 pages with 6 figures embedded. Includes Suppl. Mats.
Wojdel, Jacek C., Iniguez, Jorge
openaire   +2 more sources

Metal‐Organic Framework Embedded Electrospun Fibrous Membranes‐Based Hybrid Nanogenerators with Hierarchical Modified Polyamide Films for Mechanical Energy Harvesting and IoT Applications

Advanced Functional Materials, EarlyView.
Hybrid nanogenerator (HNG) based on a zinc‐metal‐organic framework‐loaded fibrous film integrated with a hierarchically modified nylon film having micropatterns and micropores is fabricated via an electrospinning technique, and its electrical properties are optimized. The HNGs are incorporated into wearable garments and automobile systems for practical
Sontyana Adonijah Graham, Anand Kurakula, Venkata Siva Kavarthapu, Jun Kyu Lee, Punnarao Manchi, Mandar Vasant Paranjape, Jae Su Yu   +6 more
wiley   +1 more source

Investigation on structural, dielectric and ferroelectric properties of samarium-substituted BiFeO3–PbTiO3 composites [PDF]

Journal of Advanced Dielectrics, 2017
The polycrystalline samples of 0.8BiSmxFe1−xO3–0.2PbTiO3 (x=0.05,0.10,0.15 and 0.20) were prepared by using the conventional solid-state reaction technique and sintered at high temperature (850∘C).
Truptimayee Sahu, Banarji Behera
doaj   +1 more source

Molecular Design of a Metal-Nitrosyl Ferroelectric with Reversible Photoisomerization [PDF]

, 2023
Wei‐Jian Xu, Mao-Fan Li, Ana R. García, Konstantin Romanyuk, J. M. G. Martinho, Pavel Zelenovskii, Alexander Tselev, Luís M.P. Veríssimo, Wei‐Xiong Zhang, Xiao‐Ming Chen, Andréi L. Kholkin, João Rocha   +11 more
openalex   +1 more source

Ferroelectric Switchable Altermagnetism

Physical Review Letters
7 pages, 4 ...
Mingqiang Gu, Yuntian Liu, Haiyuan Zhu, Kunihiro Yananose, Xiaobing Chen, Yongkang Hu, Alessandro Stroppa, Qihang Liu   +7 more
openaire   +3 more sources

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

Advanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li, Zhiqiang Liao, Risa Kataoka, Md Sarker Shamim, Takeshi Kijima, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki   +7 more
wiley   +1 more source

Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride

Nature Communications
The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition.
Fanrong Lin, Xiaoyu Xuan, Zhonghan Cao, Zhuhua Zhang, Ying Liu, Minmin Xue, Yang Hang, Xin Liu, Yizhou Zhao, Libo Gao, Wanlin Guo, Yanpeng Liu   +11 more
doaj   +1 more source

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Electronic Materials, 2023
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini, Benoît Manchon, Ingrid Cañero Infante, Matthieu Bugnet, Rabei Barhoumi, Shruti Nirantar, Edwin Mayes, Pedro Rojo Romeo, Nicholas Blanchard, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin   +11 more
doaj   +1 more source