Results 41 to 50 of about 74,381 (146)

Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit

Nature Communications, 2019
It is difficult to maintain ferroelectricity in the two dimensional limit. Here, the authors report robust room-temperature ferroelectricity in the thinnest monolayer MoTe2 due to relative atomic displacements of Mo and Te atoms.
Shuoguo Yuan, Xin Luo, Hung Lit Chan, Chengcheng Xiao, Yawei Dai, Maohai Xie, Jianhua Hao   +6 more
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Stable large-area monodomain in as-grown bulk ferroelectric single crystal Sn2P2S6

Journal of Advanced Dielectrics, 2023
Driven by the minimization of total energy, the multi-domain morphology is preferred in as-grown ferroelectrics to reduce the depolarization and strain energy during the paraelectric to ferroelectric phase transition.
Yingzhuo Lun, Jiaqian Kang, Wenfu Zhu, Jianming Deng, Xingan Jiang, Cheng Zhu, Qi Ren, Xian Zi, Ziyan Gao, Tianlong Xia, Zishuo Yao, Xueyun Wang, Jiawang Hong   +12 more
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Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn1‐xMgxO Thin Films through Engineering Electronic and Ionic Anharmonicities

Advanced Physics Research, 2023
Multifunctionality as a paradigm requires materials exhibiting multiple superior properties. Integrating second‐order optical nonlinearity and large bandgap with piezoelectricity can, for example, enable broadband, strain‐tunable photonics.
Rui Zu, Gyunghyun Ryu, Kyle P. Kelley, Steven M. Baksa, Leonard C. Jacques, Bo Wang, Kevin Ferri, Jingyang He, Long‐Qing Chen, Ismaila Dabo, Susan Trolier‐McKinstry, Jon‐Paul Maria, Venkatraman Gopalan   +12 more
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Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Advanced Electronic Materials, 2023
The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging.
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim   +8 more
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Antiferroelectric Bent-Core Liquid Crystal for Possible High-Power Capacitors and Electrocaloric Devices

Crystals, 2020
We present small-angle X-ray scattering, polarized optical microscopy and electric current measurements of a sulfur-containing bent-core liquid crystal material for characterization of the layer and director structures, thermally and electrically driven ...
Rony Saha, Chenrun Feng, Alexey Eremin, Antal Jákli   +3 more
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Evidence of ferroelectric behaviour in CaCu3Ti4O12 thin films deposited by RF-sputtering [PDF]

Processing and Application of Ceramics, 2019
The origin of abnormal ferroelectric and unusual piezoelectricity in the polycrystalline CaCu3Ti4O12 (CCTO) thin films deposited by RF-sputtering on Pt/Ti/SiO2/Si (100) substrates was explored.
Cesar R. Foschini, Bruno Hangai, Pedro Paulo Ortega, Elson Longo, Mário Cilense, Alexandre Z. Simões   +5 more
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Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Nature Communications, 2018
High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two ...
H. Wang, Z. R. Liu, H. Y. Yoong, T. R. Paudel, J. X. Xiao, R. Guo, W. N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian, J. S. Chen   +13 more
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Investigation on structural, dielectric and ferroelectric properties of samarium-substituted BiFeO3–PbTiO3 composites [PDF]

Journal of Advanced Dielectrics, 2017
The polycrystalline samples of 0.8BiSmxFe1−xO3–0.2PbTiO3 (x=0.05,0.10,0.15 and 0.20) were prepared by using the conventional solid-state reaction technique and sintered at high temperature (850∘C).
Truptimayee Sahu, Banarji Behera
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Electronic Materials, 2023
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini, Benoît Manchon, Ingrid Cañero Infante, Matthieu Bugnet, Rabei Barhoumi, Shruti Nirantar, Edwin Mayes, Pedro Rojo Romeo, Nicholas Blanchard, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin   +11 more
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Recipes for improper ferroelectricity in molecular perovskites

Nature Communications, 2018
In layered inorganic materials lattice distortions can couple to break inversion symmetry and drive improper ferroelectricity, but in perovskites, symmetry prohibits such an effect.
Hanna L. B. Boström, Mark S. Senn, Andrew L. Goodwin   +2 more
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