Results 71 to 80 of about 191,721 (336)

Endowing Ferroelectric Properties of Tetragonal Lysozyme Crystals through C₆₀ Doping

Crystals
The inherent nonpolarity of tetragonal lysozyme crystals excludes a ferroelectricity response. Herein, we present a demonstration of achieving measurable ferroelectricity in tetragonal lysozyme crystals through C60 doping. Ferroelectric characterizations
Renbin Zhou, Xuejiao Liu, Weihong Guo, Dachuan Yin   +3 more
doaj   +1 more source

Direct Epitaxial Growth of Polar Hf_0.5Zr_0.5O₂ Films on Corundum

Nanomaterials, 2022
Single-phase epitaxial Hf0.5Zr0.5O2 films with non-centrosymmetric orthorhombic structure have been grown directly on electrode-free corundum (α-Al2O3) substrates by pulsed laser deposition.
Eduardo Barriuso, Panagiotis Koutsogiannis, David Serrate, Javier Herrero-Martín, Ricardo Jiménez, César Magén, Miguel Algueró, Pedro A. Algarabel, José A. Pardo   +8 more
doaj   +1 more source

Ferroelectricity at ferroelectric domain walls

, 2013
10 pages with 6 figures embedded. Includes Suppl. Mats.
Wojdel, Jacek C., Iniguez, Jorge
openaire   +2 more sources

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

Investigation on structural, dielectric and ferroelectric properties of samarium-substituted BiFeO3–PbTiO3 composites [PDF]

Journal of Advanced Dielectrics, 2017
The polycrystalline samples of 0.8BiSmxFe1−xO3–0.2PbTiO3 (x=0.05,0.10,0.15 and 0.20) were prepared by using the conventional solid-state reaction technique and sintered at high temperature (850∘C).
Truptimayee Sahu, Banarji Behera
doaj   +1 more source

Ferroelectric Switchable Altermagnetism

Physical Review Letters
7 pages, 4 ...
Mingqiang Gu, Yuntian Liu, Haiyuan Zhu, Kunihiro Yananose, Xiaobing Chen, Yongkang Hu, Alessandro Stroppa, Qihang Liu   +7 more
openaire   +3 more sources

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride

Nature Communications
The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition.
Fanrong Lin, Xiaoyu Xuan, Zhonghan Cao, Zhuhua Zhang, Ying Liu, Minmin Xue, Yang Hang, Xin Liu, Yizhou Zhao, Libo Gao, Wanlin Guo, Yanpeng Liu   +11 more
doaj   +1 more source

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Electronic Materials, 2023
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini, Benoît Manchon, Ingrid Cañero Infante, Matthieu Bugnet, Rabei Barhoumi, Shruti Nirantar, Edwin Mayes, Pedro Rojo Romeo, Nicholas Blanchard, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin   +11 more
doaj   +1 more source

Thin‐Film Ferroelectrics

Advanced Materials, 2022
AbstractOver the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities.
Abel Fernandez, Megha Acharya, Han‐Gyeol Lee, Jesse Schimpf, Yizhe Jiang, Djamila Lou, Zishen Tian, Lane W. Martin   +7 more
openaire   +4 more sources