Results 71 to 80 of about 76,083 (289)
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek +8 more
wiley +1 more source
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon +9 more
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Multiferroic materials such as YMnO3, which uniquely exhibit ferroelectricity and magnetism simultaneously, have been extensively studied for spintronic device applications. However, the origin of multiferroicity remains poorly understood. In this study,
Sheng-Hsu Liu +9 more
doaj +1 more source
The concept of foulant particle manipulation and detachment from active microfiltration membranes via voltage‐driven vibrations is introduced. Actuator components are initially integrated onto the filtration membranes using an airbrush spray printing technique.
Irem Gurbuz, Hanieh Bazyar, Andres Hunt
wiley +1 more source
Optoelectronic characterisation of twisted germanium sulfide nanowires with experimental observation of intrinsic ferroelectricity [PDF]
Tamaghna Chowdhury +3 more
openalex +1 more source
Effect of Pre-Polarization Process on the Apparent Piezoelectric Response Measured by Point-Ring Method in Ferroelectric Perovskite Oxide Ceramics [PDF]
Yuanzhe Li +6 more
openalex +1 more source
Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki +7 more
wiley +1 more source
Thermodynamic Theory of Proximity Ferroelectricity
Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer.
Eugene A. Eliseev +4 more
doaj +1 more source
Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets
Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics.
Yejing Dai +6 more
doaj +1 more source

