Results 91 to 100 of about 44,485 (284)

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Artificial Intelligence‐Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

Advanced Materials, EarlyView.
AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll, Ivan Pinto‐Huguet, Enzo Rotunno, Thomas Galvani, Catalina Coll, Payam Habibzadeh Kavkani, Maria Chiara Spadaro, Yann‐Michel Niquet, Martin Børstad Eriksen, Sara Martí‐Sánchez, Georgios Katsaros, Giordano Scappucci, Peter Krogstrup, Giovanni Isella, Andreu Cabot, Gonzalo Merino, Pablo Ordejón, Stephan Roche, Vincenzo Grillo, Jordi Arbiol   +19 more
wiley   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

Flexoelectrically Induced Polar Topology in Twisted SrTiO3 Membranes

Advanced Materials, EarlyView.
Twisted SrTiO3 bilayers host polar vortices of flexoelectric origin, revealed through combined experiment and theory. By reconstructing polarization from the toroidal moment of strain gradients, the work establishes a 3D chiral state with broken inversion and mirror symmetries.
Isabel Tenreiro, Hugo Aramberri, Víctor Rouco, Gabriel Sánchez‐Santolino, Mariona Cabero, Fernando Gallego, David Sánchez‐Manzano, José M. González‐Calbet, Federico Mompeán, Mar García‐Hernández, Alberto Rivera‐Calzada, Jorge Íñiguez‐González, Carlos León, Jacobo Santamaría   +13 more
wiley   +1 more source

Origin of dielectric relaxor behavior in PVDF-based copolymer and terpolymer films

AIP Advances, 2018
Relaxor ferroelectrics exhibit frequency-dispersion of their dielectric permittivity peak as a function of temperature, the origin of which has been widely debated. Microscopic understanding of such behavior for polymeric ferroelectrics has presented new
Abhijit Pramanick, Naresh C. Osti, Niina Jalarvo, Scott T. Misture, Souleymane Omar Diallo, Eugene Mamontov, Y. Luo, Jong-Kahk Keum, Ken Littrell   +8 more
doaj   +1 more source

Asymmetry of the Ferroelectric Phase Transition in BaTiO3

Advanced Materials, EarlyView.
Phase transitions are typically assumed to behave identically in forward and reverse. This work shows that in the ferroelectric material barium titanate this is not true: heating drives an abrupt, first‐order jump, while cooling gives a smooth, continuous change.
Asaf Hershkovitz, Elangovan Hemaprabha, Rajesh Mandal, Pravin Kavle, Jamil Tanus, Maya Barzilay, Ching‐Che Lin, David Spirito, Semën Gorfman, Bo Wang, Ignacio J. Villar‐García, Neus Domingo, Long‐Qing Chen, Lane W. Martin, Yachin Ivry   +14 more
wiley   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

Advanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho, Seoyeon Park, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

Triggered Ferroelectricity in HfO2 From Hybrid Phonons and Higher‐Order Dynamical Charges

Advanced Materials, EarlyView.
We combine first‐principles calculations, LGD theory and group theory to demonstrate the mechanism of hybrid‐triggered ferroelectricity in HfO2${\rm HfO}_2$, enabled by trilinear and quadlinear couplings between stable polar and nonpolar modes. HfO2${\rm HfO}_2$ hosts unconventional interplay between structure modes where substantial contribution to ...
Seongjoo Jung, Turan Birol
wiley   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source