Results 181 to 190 of about 73,650 (293)
The flexible solid‐state metaferroelectrolyte is fabricated through an in situ cross‐linking and spontaneous bridging method by introducing strongly ferroelectric‐coupled intrinsic ion conducting Na2.99Ba0.005OCl/CNNO‐ nanosheets into PVDF‐HFP matrix. The unique 3D ferroelectric‐coupled network and Na2.99Ba0.005OCl/CNNO‐‐induced ferroelectric PVDF‐HFP ...
Yanan Huang+15 more
wiley +1 more source
Distance and relative humidity contributions to the atomic force microscopy off surface electrostatic response of soda lime glass. [PDF]
Gaponenko I+4 more
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A note on the structure of non-ferroelectric lead metatantalate
R. V. Coates
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A radical salt undergoes a paraelastic‐ferroelastic phase transition, which is coupled with spin‐Peierls transition, resulting in it integrating self‐strain, spin bistability, switchable dielectric and high‐ properties. Abstract Materials that exhibit controllable changes in electrical, magnetic, or spontaneous strain properties, particularly those ...
Xuan‐Rong Chen+5 more
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Configurable kinetics of polarization switching via ion migration in ferroionic CuInP<sub>2</sub>S<sub>6</sub>. [PDF]
Liang L+11 more
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VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter
Vanadium oxide‐based memristor devices achieve high performance for next‐generation non‐volatile memory and RF switches. These devices demonstrate a cutoff frequency of ≈4.5 THz, low insertion loss (<0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to 67 GHz.
Dabin Seo+6 more
wiley +1 more source
Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions. [PDF]
Li P+11 more
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Implementing Multimodal Hardware Security with 2D α‐In2Se3 Ferroelectric Transistor
A multimodal secure transistor‐integrated in‐memory sensing and computing architecture is demonstrated by leveraging its electronic and optoelectronic synaptic behaviors. Key security primitives, such as anticounterfeiting, watermarking, logic locking, and camouflaging, are implemented within a compact single‐transistor structure, providing a scalable ...
Xinwei Zhang+11 more
wiley +1 more source
Impact of Ce Doping on the Relaxor Behavior and Electrical Properties of Sr0.4Ba0.6Nb2O6 Ferroelectric Ceramics. [PDF]
Zhao Y, Mao P, Kang R, Li Z, Kang F.
europepmc +1 more source