Results 221 to 230 of about 44,485 (284)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Ultra-high energy storage in relaxor ferroelectric MLCCs at elevated temperatures via entropy modulated strain heterogeneity. [PDF]

Nat Commun
Kang R, Li Y, Hu T, Wang Z, Gao Y, Xu J, Bai M, Fu Z, Zhang L, Zhao J, Wang D, Shao J, Li F, Zhang S, Lou X.   +14 more
europepmc   +1 more source

Smart Bioinspired Material‐Based Actuators: Current Challenges and Prospects

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
This work gathers, in a review style, an extensive and comprehensive literature overview on the development of autonomous actuators based on synthetic materials, bringing together valuable knowledge from several studies. Furthermore, the article identifies the fundamental principles of actuation mechanisms and defines key parameters to address the size
Alejandro Palacios, Léon Chiriatti, Simon Poppinga, Thomas Speck, Vincent Le Houérou   +4 more
wiley   +1 more source

Phase engineering of relaxor ferroelectricity in van der Waals crystal. [PDF]

Nat Commun
Yang T, Ma Y, Zheng D, Deng W, Liu C, Chen M, Mai K, Lv X, Zhang X, Xu J, Wang B, Li Y, Tang M, Tian G, Yang W, Zhang X.   +15 more
europepmc   +1 more source

High-performance elastic ferroelectrics <i>via</i> low-temperature carbene crosslinking and high-temperature annealing. [PDF]

Chem Sci
Wang L, Gao L, Rao X, Li F, Zu D, Liu Y, Hu BL.   +6 more
europepmc   +1 more source

Electron Channeling Contrast Imaging of Ferroelastic Domains. [PDF]

Adv Mater
Peng W, Singh A, Qaiser MH, Fahler-Muenzer P, Watson F, Si L, Xie Y, Sopińska KE, Chaney DA, Sanchez AM, Britton TB, Beanland R, Hadjimichael M, Alexe M.   +13 more
europepmc   +1 more source

Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe₂ semiconductor. [PDF]

Nat Commun
Xue W, Wang P, Ci W, Guo Y, Qu J, Zeng Z, Liu T, He R, Cheng S, Xu X.   +9 more
europepmc   +1 more source

Potential Multiaxial Molecular Ferroelectricity through Chiral Cation Replacement. [PDF]

Cryst Growth Des
Thompson SY, Abeyasekere RH, Page SJ, Hodgkinson P, Scott CAM, Bristowe NC, Wagstaff OJ, Evans JSO.   +7 more
europepmc   +1 more source

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Ferroelectric Memories

Science, 1989
In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (30-nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme ...
J F, Scott, C A, Paz de Araujo
openaire   +2 more sources