Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review [PDF]
Micromachines, 2023 Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations.
Tianzhuo Zhan +19 more
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The diamond RF-transistor model [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011 In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen
Altukhov A. A. +4 more
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Diamond semiconductor technology for RF device applications [PDF]
, 2005 This paper presents a comprehensive review of diamond electronics from the RF perspective. Our aim was to find and present the potential, limitations and current status of diamond semiconductor devices as well as to investigate its suitability for RF ...
Davidson, Jimmy L. +4 more
core +1 more source
CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection [PDF]
, 2016 In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies.
De Amicis, Giovanni +5 more
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Diamond FinFET without Hydrogen Termination
Scientific Reports, 2018 In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective ...
Biqin Huang +3 more
doaj +1 more source
A Breakdown Voltage Multiplier for High Voltage Swing Drivers [PDF]
, 2007 A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response.
Hajimiri, Ali, Mandegaran, Sam
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An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology [PDF]
, 2014 Thanks to its wide bandgap, exceptionally high thermal conductivity and relatively high carrier velocities, diamond exhibits attractive semiconductor properties that make it an interesting candidate for high power, high frequency and high temperature ...
Camarchia, Vittorio +5 more
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Reconfigurable optical spectra from perturbations on elliptical whispering gallery resonances [PDF]
, 2008 Elastic strain, electrical bias, and localized geometric deformations were applied to elliptical whispering-gallery-mode resonators fabricated with lithium niobate. The resultant perturbation of the mode spectrum is highly dependant on the modal indices,
Maleki, Lute, Mohageg, Makan
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Signal and noise of Diamond Pixel Detectors at High Radiation Fluences
, 2012 CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice.
+23 more
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Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
, 2011 We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage.
Chen, Fei +8 more
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