Results 1 to 10 of about 43 (42)

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Micromachines, 2023
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations.
Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu, Yibin Xu, Haidong Wang, Mengjie Song, Wei Wang, Yanguang Zhou, Xuqing Liu, Yu Shi, Yu Jia, Sujun Guan, Tatsuro Hanajiri, Toru Maekawa, Akitoshi Okino, Takanobu Watanabe   +19 more
doaj   +1 more source

The diamond RF-transistor model [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011
In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen
Altukhov A. A., Zyabluk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V.   +4 more
doaj   +2 more sources

Diamond FinFET without Hydrogen Termination

Scientific Reports, 2018
In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective ...
Biqin Huang, Xiwei Bai, Stephen K. Lam, Kenneth K. Tsang   +3 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, EarlyView.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source

Endohedral fullerenes as qubits: From synthesis to quantum computing applications

InfoMat, EarlyView.
Endohedral fullerenes emerge as promising platforms for qubits and qudits. This review surveys the primary synthesis routes, from arc‐discharge to high‐yield molecular surgery. It then details spin manipulation and readout in key systems, including metal‐based, cluster, and nitrogen‐containing fullerenes.
Jeong‐Seok Nam, Jiye Han, Jin‐Myung Choi, Franklin H. Cho, Daniel K. Park, Seunghee Park, Yoshifumi Hashikawa, Yasujiro Murata, Eunsang Kwon, Dong‐Hwan Kim, Junki Kim, Il Jeon   +11 more
wiley   +1 more source

Design and optoelectronic profiling of a semicrystalline thiophene–phenylene copolymer for advanced organic electronics

Polymer International, EarlyView.
A new semicrystalline copolymer, PTBT‐3OBu, was synthesized. Intramolecular S···O conformational locks induce high backbone planarity, promoting strong interchain coupling and molecular ordering in thin films, seen in an optical red shift. This synergy between planarity and semicrystalline morphology is promising for photovoltaic and electrochromic ...
Sandra Lúcia Nogueira, Silésia de Fátima Curcino da Silva, Giovani Bortolini Oliveira, Bruno Souza Zanatta, Thibaut Jarrosson, Françoise Serein‐Spirau, Alexandre Marletta, Raigna Augusta da Silva   +7 more
wiley   +1 more source

Ultrafast time‐resolved X‐ray absorption spectroscopy at FemtoMAX beamline

Journal of Synchrotron Radiation, EarlyView.
A new setup for femtosecond resolution X‐ray absorption spectroscopy with energy ranging from 2 to 15 keV is established.We report on the development and first experiments at a new X‐ray absorption spectroscopy (XAS) endstation at the FemtoMAX beamline of the MAX IV Laboratory.
Van-Thai Pham, Katharina Kubicek, Ahn Byungnam, Carl Ekström, David Kroon, Zhangatay Nurekeyev, Mohammed Sekkal, Axl Eriksson, Hyein Hwang, Anna Zymaková, Thanh Binh Nguyen, Minh-Huong Ha-Thi, Xuan Thang Vu, Yohei Uemura, Jörgen Larsson, Christian Bressler, Jens Uhlig   +16 more
wiley   +1 more source

The prototype DynamiX camera system – a high‐frame‐rate high‐dynamic‐range hard X‐ray integrating detector for fourth‐generation synchrotrons

Journal of Synchrotron Radiation, EarlyView.
This paper presents the first results from the DynamiX X‐ray imaging detector developed by the UK's Science and Technology Facilities Council for a new generation of photon light sources. Operating at a continuous frame rate of 534 kHz and with a per‐pixel per‐frame dynamic range of roughly five orders of magnitude, this work is the first step in ...
Simon Knowles, Darren Ballard, Dominic Banks, Stephen Bell, Manuele Bettelli, Ivan Church, Alex Dainty, Adam Davis, Vishal Dhamgaye, Oliver Fox, Marcus French, Thomas Gardiner, Navid Ghorbanian, Josh Harris, Matt Hart, Aswathi Koorikkat, Matt Larkin, John Lipp, John Matheson, Tim Nicholls, Joseph Nobes, Mark Prydderch, Kawal Sawhney, Matthew C. Veale, Matthew D. Wilson, Silvia Zanettini   +25 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source