Results 101 to 110 of about 141,245 (296)

Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

, 2017
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A., Conrad, Nathan J., Jiang, Chunsheng, Maize, Kerry D., Qiu, Gang, Shakouri, Ali, Si, Mengwei, Su, Chun-Jung, Wu, Chien-Ting, Ye, Peide D., Zhou, Hong   +10 more
core   +1 more source

Electric Field‐Dependent Conductivity as Probe for Charge Carrier Delocalization and Morphology in Organic Semiconductors

Advanced Functional Materials, EarlyView.
Applying a high electric field to a doped organic semiconductor heats up the charge carrier distribution beyond the lattice temperature, enhancing conductivity. It is shown that the associated effective temperature can be used to extract the effective localization length, which is a characteristic length scale of charge transport and provides ...
Morteza Shokrani, Felix Maximilian Graf, Anton Kompatscher, Dennis Derewjanko, Martijn Kemerink   +4 more
wiley   +1 more source

Insulated-gate field-effect transistor strain sensor [PDF]

, 1972
Strain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation.
Gross, C.
core   +1 more source

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

, 2018
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4].
A Damascelli, AA Soluyanov, AD Becke, Anton Tadich, B Deng, C Niu, Chang Liu, D Koller, F Reis, F Tran, H Pan, Hyejin Ryu, I Battisti, I Souza, J Hellerstedt, J Liu, J Voit, J Wu, Jack Hellerstedt, James L. Collins, JM Blanco, JM Pitarke, Joao N. B. Rodrigues, JP Perdew, JP Perdew, L Ju, Lidia C. Gomes, M König, Mark T. Edmonds, Michael S. Fuhrer, MP Lopez Sancho, MT Edmonds, MT Edmonds, ND Lang, PE Blöchl, Q Wu, R Yu, S Borisenko, S Hufner, S Tang, S Wu, Shaffique Adam, Shengyuan A. Yang, Shujie Tang, Sung-Kwan Mo, T Ohta, T Schumann, Weikang Wu, WG Vandenberghe, X Qian, Y Zhang, Y Zhang, Z Fei, Z Wang, ZK Liu, ZK Liu   +55 more
core   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

Nanomaterials-based Field Effect Transistor biosensor for cancer therapy

Next Nanotechnology
Biosensors made of nanomaterials play a prominent part in diagnostic applications in the biomedical domain. The peculiar characteristics of nanomaterials including quantum effects, self-assembly, and larger surface area make them an irresistible choice ...
Silpa Sasikumar, Kishore Sivaram, N. Sreejisha, Selvakumar Murugesan   +3 more
doaj   +1 more source

A Study on Graphene—Metal Contact

Crystals, 2013
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 ...
Hongyu Yu, Jun Wei, Xiaowei Sun, Wenjun Liu   +3 more
doaj   +1 more source

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

, 2005
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode.
Chong, Lit Ho, de Groot, C. H., Mallik, Kanad   +2 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Quantized Conductance and Field-Effect Topological Quantum Transistor in Silicene Nanoribbons

, 2013
Silicene (a monolayer of silicon atoms) is a quantum spin-Hall insulator, which undergoes a topological phase transition into other insulators by applying external field such as electric field, photo-irradiation and antiferromagnetic order.
Ezawa, Motohiko
core   +1 more source