Results 101 to 110 of about 50,888 (308)

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

Single flake homo p–n diode of MoTe2 enabled by oxygen plasma doping

Nanotechnology Reviews
Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices.
Zulfiqar Irsa, Gul Sania, Sohail Hafiz Aamir, Rabani Iqra, Gul Saima, Rehman Malik Abdul, Wabaidur Saikh Mohammad, Yasir Muhammad, Ullah Inam, Khan Muhammad Asghar, Rehman Shania, Khan Muhammad Farooq   +11 more
doaj   +1 more source

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

Advanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun, Min Gyeong Shin, Uje Choi, Jieun Yeon, Jae Joon Kim, Yangjin Lee, Kwanpyo Kim   +6 more
wiley   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source

Impact of device resistances in the performance of graphene-based terahertz photodetectors

Frontiers of Optoelectronics
In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity.
O. Castelló, Sofía M. López Baptista, K. Watanabe, T. Taniguchi, E. Diez, J. E. Velázquez-Pérez, Y. M. Meziani, J. M. Caridad, J. A. Delgado-Notario   +8 more
doaj   +1 more source

Generation of short electrical pulses using nonlinear traveling-wave field effect transistors

, 2010
Koichi Narahara
openalex   +2 more sources

Local Maps of the Polarization and Depolarization in Organic Ferroelectric Field-Effect Transistors [PDF]

, 2016
Ronggang Cai, Alain M. Jonas
openalex   +1 more source

Extensive Review of Materials for Next‐Generation Transparent Batteries and Their Design Strategies

Advanced Functional Materials, EarlyView.
Review explores emerging materials and design strategies for transparent batteries, examining electrodes, electrolytes, separators, and device architectures optimized for high electrochemical performance, mechanical flexibility, and optical transparency.
Atul Kumar Mishra, Shuvaraj Ghosh, Malkeshkumar Patel, Sourov Hossain, Ju‐Hyung Yun, Joondong Kim   +5 more
wiley   +1 more source

Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors [PDF]

, 2019
Yonatan Vaknin, Ronen Dagan, Y. Rosenwaks   +2 more
openalex   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source