Results 11 to 20 of about 1,234,359 (313)

The ferroelectric field-effect transistor with negative capacitance [PDF]

npj Computational Materials, 2022
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk, A. Razumnaya, A. Sené, Y. Tikhonov, V. M. Vinokur   +4 more
doaj   +2 more sources

A hole spin qubit in a fin field-effect transistor above 4 kelvin [PDF]

Nature Electronics, 2021
The greatest challenge in quantum computing is achieving scalability. Classical computing, which previously faced such issues, currently relies on silicon chips hosting billions of fin field-effect transistors.
L. Camenzind, S. Geyer, Andreas Fuhrer, R. Warburton, D. Zumbühl, A. Kuhlmann   +5 more
semanticscholar   +1 more source

Wearable aptamer-field-effect transistor sensing system for noninvasive cortisol monitoring

Science Advances, 2022
A smartwatch was developed for noninvasive stress biomarker data acquisition that provides real-time feedback to the wearer.
Bo Wang, Chuanzhen Zhao, Zhaoqing Wang, K. Yang, Xuanbing Cheng, Wenfei Liu, Wenzhuo Yu, Shuyu Lin, Yichao Zhao, Kevin M. Cheung, Haisong Lin, H. Hojaiji, Paul S. Weiss, M. Stojanović, A. Tomiyama, A. M. Andrews, S. Emaminejad   +16 more
semanticscholar   +1 more source

Extended gate field-effect-transistor for sensing cortisol stress hormone

Communications Materials, 2021
Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect ...
S. Sheibani, L. Capua, S. Kamaei, S. Akbari, Junrui Zhang, H. Guérin, A. Ionescu   +6 more
semanticscholar   +1 more source

Increasing the sensitivity and radiation resistance of temperature sensor-converters using generators based on unijunction transistors

Технологія та конструювання в електронній апаратурі, 2023
The authors experimentally study the influence of temperature and radiation on the characteristics of generators based on a unijunction transistor (UJT).
Ivan Vikulin, Lidiya Vikulinа, Pavlo Markolenko, Oleksandr Nazarenko   +3 more
doaj   +1 more source

Implantable aptamer–field-effect transistor neuroprobes for in vivo neurotransmitter monitoring

Science Advances, 2021
Implantable aptamer transistor probes for in vivo neurotransmitter monitoring advance brain activity recording.
Chuanzhen Zhao, Kevin M. Cheung, I-Wen Huang, Hongyan Yang, Nako Nakatsuka, Wenfei Liu, Yan Cao, Tianxing Man, Paul S. Weiss, H. Monbouquette, A. M. Andrews   +10 more
semanticscholar   +1 more source

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [PDF]

Science, 2011
Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there is also an effective way of creating a barrier to current flow so that the ...
L. Britnell, R. Gorbachev, R. Jalil, B. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. Katsnelson, L. Eaves, S. Morozov, N. Peres, J. Leist, A.K. Geim, K. Novoselov, L. Ponomarenko   +14 more
semanticscholar   +1 more source

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

Advanced Electronic Materials, 2020
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer ...
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber   +11 more
doaj   +1 more source

Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

Journal of Optoelectronical Nanostructures, 2022
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand, Zahra Ahangari, Hamed Nematian   +2 more
doaj   +1 more source

Experimental studies and a double gate JFET model for analog integrated circuits

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2021
One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing with ...
Y. D. Galkin, O. V. Dvornikov, V. A. Tchekhovski, N. N. Prokopenko   +3 more
doaj   +1 more source