Results 11 to 20 of about 50,888 (308)

Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor

Micromachines, 2022
In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in ...
Yu-Xuan Lu, Chih-Ting Lin, Ming-Hsui Tsai, Kuan-Chou Lin   +3 more
doaj   +1 more source

Graphene antidot nanoribbon tunnel field‐effect transistor

Micro & Nano Letters, 2022
A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
doaj   +1 more source

Nonballistic Spin-Field-Effect Transistor [PDF]

Physical Review Letters, 2003
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed.
Schliemann, John, Egues, J. Carlos, Loss, Daniel   +2 more
openaire   +5 more sources

Increasing the sensitivity and radiation resistance of temperature sensor-converters using generators based on unijunction transistors

Технологія та конструювання в електронній апаратурі, 2023
The authors experimentally study the influence of temperature and radiation on the characteristics of generators based on a unijunction transistor (UJT).
Ivan Vikulin, Lidiya Vikulinа, Pavlo Markolenko, Oleksandr Nazarenko   +3 more
doaj   +1 more source

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

Advanced Electronic Materials, 2020
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer ...
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber   +11 more
doaj   +1 more source

Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

Journal of Optoelectronical Nanostructures, 2022
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand, Zahra Ahangari, Hamed Nematian   +2 more
doaj   +1 more source

Experimental studies and a double gate JFET model for analog integrated circuits

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2021
One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing with ...
Y. D. Galkin, O. V. Dvornikov, V. A. Tchekhovski, N. N. Prokopenko   +3 more
doaj   +1 more source

The Behavioural Model of Graphene Field-effect Transistor [PDF]

International Journal of Electronics and Telecommunications, 2020
The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly.
Maciej Łuszczek, Marek Turzyński, Dariusz Świsulski   +2 more
doaj   +1 more source

Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit [PDF]

Журнал нано- та електронної фізики, 2017
This paper proposes the novel low power and area efficient ALU (Arithmetic and Logic Unit) using adder and multiplexers. The adder and multiplexer are realized by using CNTFET (Carbon Nano Tube Field Effect Transistor) A verilog model of MOSFET (Metal ...
K.В Nehru, T.В Nagarjuna, G.В Vijay   +2 more
doaj   +1 more source

Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]

Журнал нано- та електронної фізики, 2017
Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh, R.S. Gupta, Sujata Pandey   +2 more
doaj   +1 more source