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Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]
Журнал нано- та електронної фізики, 2017 Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh +2 more
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Field Effect Transistors [PDF]
, 2005 This chapter will cover most of the basic GaAs-related processing steps for GaAs field effect transistors, including most of the front end steps. Active steps are those that relate to the fabrication of the GaAs field effect transistor and do not include the interconnections or the integration of passive elements.
Veena Misra, Mehmet C. Öztürk
openaire +2 more sources
Sensors, 2020 pH sensors based on a nanostructured ion-sensitive field-effect transistor have characteristics such as fast response, high sensitivity and miniaturization, and they have been widely used in biomedicine, food detection and disease monitoring.
Yiqing Wang, Min Yang, Chuanjian Wu
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Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
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Micromachines, 2021 Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi +6 more
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Radiation-sensitive field effect transistor response to gamma-ray irradiation [PDF]
Nuclear Technology and Radiation Protection, 2011 The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated.
Pejović Milić M. +2 more
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On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field [PDF]
, 2019 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals.
Bauch, Thilo +6 more
core +2 more sources
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
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IEEE Journal of the Electron Devices Society, 2015 In this paper, we have utilized a poly(vinylidene difluoride) poly(styrene) sulfonic acid patterned ion-conducting membrane as a platform onto which electronics based on both depletion mode and enhancement mode ion-modulated transistors have been built ...
Fredrik Pettersson +6 more
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Neuroevolution-Based Efficient Field Effect Transistor Compact Device Models
IEEE Access, 2021 Artificial neural networks (ANN) and multilayer perceptrons (MLP) have proved to be efficient in terms of designing highly accurate semiconductor device compact models (CM).
Ya-Wen Ho +6 more
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