Results 21 to 30 of about 50,888 (308)

Design and Implementation of a pH Sensor for Micro Solution Based on Nanostructured Ion-Sensitive Field-Effect Transistor

open access: yesSensors, 2020
pH sensors based on a nanostructured ion-sensitive field-effect transistor have characteristics such as fast response, high sensitivity and miniaturization, and they have been widely used in biomedicine, food detection and disease monitoring.
Yiqing Wang, Min Yang, Chuanjian Wu
doaj   +1 more source

Field Effect Transistors [PDF]

open access: yes, 2005
This chapter will cover most of the basic GaAs-related processing steps for GaAs field effect transistors, including most of the front end steps. Active steps are those that relate to the fabrication of the GaAs field effect transistor and do not include the interconnections or the integration of passive elements.
Veena Misra, Mehmet C. Öztürk
openaire   +2 more sources

Tunnel Field-Effect Transistor With Segmented Channel

open access: yesIEEE Journal of the Electron Devices Society, 2019
A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
doaj   +1 more source

Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

open access: yesMicromachines, 2021
Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi   +6 more
doaj   +1 more source

Radiation-sensitive field effect transistor response to gamma-ray irradiation [PDF]

open access: yesNuclear Technology and Radiation Protection, 2011
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated.
Pejović Milić M.   +2 more
doaj   +1 more source

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

open access: yesInternational Islamic University Malaysia Engineering Journal, 2020
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim   +2 more
doaj   +1 more source

Neuroevolution-Based Efficient Field Effect Transistor Compact Device Models

open access: yesIEEE Access, 2021
Artificial neural networks (ANN) and multilayer perceptrons (MLP) have proved to be efficient in terms of designing highly accurate semiconductor device compact models (CM).
Ya-Wen Ho   +6 more
doaj   +1 more source

Patterned Membrane as Substrate and Electrolyte in Depletion- and Enhancement Mode Ion-Modulated Transistors

open access: yesIEEE Journal of the Electron Devices Society, 2015
In this paper, we have utilized a poly(vinylidene difluoride) poly(styrene) sulfonic acid patterned ion-conducting membrane as a platform onto which electronics based on both depletion mode and enhancement mode ion-modulated transistors have been built ...
Fredrik Pettersson   +6 more
doaj   +1 more source

The ferroelectric field-effect transistor with negative capacitance

open access: yesnpj Computational Materials, 2022
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk   +4 more
doaj   +1 more source

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

open access: yesAdvanced Science, 2022
To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek   +9 more
doaj   +1 more source

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