Results 41 to 50 of about 1,234,359 (313)
Advanced Functional Materials, EarlyView.A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Multilayer MoS2 Schottky Barrier Field Effect Transistor
IEEE Open Journal of NanotechnologyThe miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB ...
Sebastiano De Stefano +7 more
doaj +1 more source
A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor
Micromachines, 2022 A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
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Advanced Functional Materials, EarlyView.This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens +14 more
wiley +1 more source
High Ion/Ioff current ratio graphene field effect transistor: the role of line defect
Beilstein Journal of Nanotechnology, 2015 The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect
Mohammad Hadi Tajarrod +1 more
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Delta-doped β-gallium oxide field-effect transistor [PDF]
, 2017 We report silicon delta doping in gallium oxide (β-Ga2O3) grown by plasma-assisted molecular beam epitaxy using a shutter pulsing technique. We describe the growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma
S. Krishnamoorthy +4 more
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
wiley +1 more source
Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor.
Nano letters (Print), 2018 P-type two-dimensional steep-slope negative capacitance field-effect transistors are demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium zirconium oxide in gate dielectric stack.
M. Si +5 more
semanticscholar +1 more source
Synchrotron Radiation for Quantum Technology
Advanced Functional Materials, EarlyView.Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
Recent Progress on Semiconductor-Interface Facing Clinical Biosensing
Sensors, 2021 Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. This leads to their application as sensors and biosensors.
Mingrui Zhang, Mitchell Adkins, Zhe Wang
doaj +1 more source