Results 51 to 60 of about 1,234,359 (313)

Rational Fine‐Tuning of MOF Pore Metrics: Enhanced SO2 Capture and Sensing with Optimal Multi‐Site Interactions

Advanced Functional Materials, EarlyView.
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing, Abdulrahman Mohabbat, István Boldog, Jens Möllmer, Marcus Lange, Yulyan Haiduk, Tobias Heinen, Vladimir Pankov, Oliver Weingart, Christoph Janiak   +9 more
wiley   +1 more source

DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS [PDF]

مجله مدل سازی در مهندسی, 2010
In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce self-heating effects. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in
علی اصغر Orouji, سارا Heydari
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.

Nano letters (Print), 2016
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths.
A. Nourbakhsh, Ahmad Zubair, R. Sajjad, A. Tavakkoli K. G., Wei Chen, S. Fang, X. Ling, J. Kong, M. Dresselhaus, E. Kaxiras, K. Berggren, D. Antoniadis, T. Palacios   +12 more
semanticscholar   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Advances in flexible organic field-effect transistors and their applications for flexible electronics

npj Flexible Electronics, 2022
Flexible electronics have suggested tremendous potential to shape human lives for more convenience and pleasure. Strenuous efforts have been devoted to developing flexible organic field-effect transistor (FOFET) technologies for rollable displays ...
Kai Liu, B. Ouyang, Xiaojun Guo, Yunlong Guo, Yunqi Liu   +4 more
semanticscholar   +1 more source

Ladder‐Type Benzene‐Perylene Dyes with Efficient Laser Properties in the Near‐IR by Detracting/Activating Low/High Frequency Vibronic Modes

Advanced Functional Materials, EarlyView.
The NNR‐n series of oligomeric nanographenes delivers exceptional emission performance. This work shows that this performance is originated by their ladder‐type structure, which effectively deactivates low‐frequency vibronic modes. This deactivation neglects the main pathway for non‐emissive deactivation, even in the near‐infrared region. The potential
Marcos Díaz‐Fernández, Álex Farrando Pérez, Fernando Gordillo Gámez, Pedro G. Boj, José M. Villalvilla, José A. Quintana, Yanpei Wan, Daniel Aranda, José Manuel Marín‐Beloqui, Jishan Wu, Zebing Zeng, María A. Díaz‐García, Juan Casado   +12 more
wiley   +1 more source

Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy

AIP Advances, 2013
Accurate measurement of the strain field in the channels of transistor arrays is critical for strain engineering in modern electronic devices. We applied atomic-resolution high-angle annular dark-field scanning transmission electron microscopy to ...
Suhyun Kim, Joong Jung Kim, Younheum Jung, Kyungwoo Lee, Gwangsun Byun, KyoungHwan Hwang, Sunyoung Lee, Kyupil Lee   +7 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Recent Advances in Field Effect Transistor Biosensors: Designing Strategies and Applications for Sensitive Assay

Biosensors, 2023
In comparison with traditional clinical diagnosis methods, field–effect transistor (FET)–based biosensors have the advantages of fast response, easy miniaturization and integration for high–throughput screening, which demonstrates their great technical ...
Ruisha Hao, Lei Liu, Jiangyan Yuan, Lingli Wu, Shengbin Lei   +4 more
doaj   +1 more source