Results 61 to 70 of about 141,245 (296)
Coulomb blockade in a Si channel gated by an Al single-electron transistor
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated ...
Brown, K. R., Kane, B. E., Sun, L.
core +1 more source
Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee +5 more
wiley +1 more source
Field effect transistor and method of construction thereof [PDF]
A field effect transistor is constructed by placing a semi-conductor layer on an insulating substrate so that the gate region is separated from source and drain regions. The gate electrode and gate region of the layer are of generally reduced length, the
Fletner, W. R.
core +1 more source
Control of Majorana Edge Modes by a g-factor Engineered Nanowire Spin Transistor
We propose the manipulation of Majorana edge states via hybridization and spin currents in a nanowire spin transistor. The spin transistor is based on a heterostructure nanowire comprising of semiconductors with large and small g-factors that form the ...
De, Amrit, Kovalev, Alexey A.
core +1 more source
SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor [PDF]
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a
Feenstra, Randall M. +3 more
core +2 more sources
Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato +10 more
wiley +1 more source
Transit-Time Spin Field-Effect-Transistor
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor ...
Appelbaum, Ian, Monsma, Douwe
core +1 more source
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
Field effect transistor biosensors for healthcare monitoring
The burgeoning demand for healthcare monitoring has brought field effect transistor (FET) biosensors into the spotlight as a highly efficient detection technology. FET biosensors offer inherent advantages including high sensitivity, rapid response times,
Zhicheng Zhang +5 more
doaj +1 more source
Graphene field-effect transistor application for flow sensing
Microflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature ...
Łuszczek Maciej +4 more
doaj +1 more source

