Results 71 to 80 of about 50,888 (308)
Compact spin qubits using the common gate structure of fin field-effect transistors
Tetsufumi Tanamoto, Keiji Ono
openalex +1 more source
Device Integration Technology for Practical Flexible Electronics Systems
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa +5 more
wiley +1 more source
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source
This study explores the benefits of metasurfaces made from functional materials, highlighting their ability to be adapted and improved for various high‐frequency applications, including communications and sensing. It first demonstrates the potential of these functional material‐based metasurfaces to advance the field of sub‐THz perceptive networks ...
Yat‐Sing To +5 more
wiley +1 more source
Ice Lithography: Recent Progress Opens a New Frontier of Opportunities
This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang +9 more
wiley +1 more source
Tailoring the Properties of Functional Materials With N‐Oxides
The properties of materials bearing N‐oxide groups are often dominated by the polar N+─O− bond. It provides hydrophilicity, selective ion‐binding, electric conductivity, or antifouling properties. Many of the underlying mechanisms have only recently been discovered, and the interest in N‐oxide materials is rapidly growing.
Timo Friedrich +5 more
wiley +1 more source
A Study on Graphene—Metal Contact
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 ...
Hongyu Yu +3 more
doaj +1 more source
Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors
Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee +10 more
wiley +1 more source
Thermoelectric temperature sensors are developed that directly measure heat changes during optical‐based neural stimulation with millisecond precision. The sensors reveal the temperature windows for safe reversible neural modulation: 1.4–4.5 °C enables reversible neural inhibition, while temperatures above 6.1 °C cause permanent thermal damage.
Junhee Lee +9 more
wiley +1 more source
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey +5 more
wiley +1 more source

