Results 81 to 90 of about 141,245 (296)

Synthesis and characterization of copper, polyimide and TIPS-pentacene layers for the development of a solution processed fibrous transistor [PDF]

open access: yes, 2011
A study was performed for the development of a flexible organic field effect transistor starting from a polyester fibre as substrate material. Focus of subsequent layer deposition was on low temperature soluble processes to allow upscaling.
Bruneel, Els   +5 more
core   +3 more sources

Tin‐Oxo Nanocluster Extreme UV Photoresists Equipped with Chemical Features for Atmospheric Stability and High EUV Sensitivity

open access: yesAdvanced Functional Materials, EarlyView.
Fluoroalkyl‐functionalized tin–oxo nanoclusters (N‐TOC6) enable robust pattern formation through ligand crosslinking under EUV exposure without thermal processing. Sn–F coordination mitigates the Lewis acidity of Sn centers, suppressing reactions with airborne molecules and improving post‐exposure pattern stability.
Yejin Ku   +18 more
wiley   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

open access: yesAdvanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo   +10 more
wiley   +1 more source

Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor [PDF]

open access: yes, 2008
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-
Chen, Yu   +4 more
core  

High On/Off Ratio Graphene Nanoconstriction Field Effect Transistor

open access: yes, 2010
We report a method to pattern monolayer graphene nanoconstriction field effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback controlled electromigration (FCE) to form a constriction in a ...
Goldsmith†, Brett   +5 more
core   +2 more sources

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

open access: yesAdvanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa   +6 more
wiley   +1 more source

Transport and Field Emission Properties of MoS2 Bilayers

open access: yesNanomaterials, 2018
We report the electrical characterization and field emission properties of MoS 2
Francesca Urban   +4 more
doaj   +1 more source

Signal conditioner circuit for photomultiplier tube [PDF]

open access: yes, 1970
Miniaturized circuit improves measurement of radiation dose absorbed in a scintillation crystal. The temperature coefficient of the field-effect transistor gate-source voltage in the isolation amplifier can be readily ...
Cellier, A., Hoover, W. M.
core   +1 more source

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

open access: yesAdvanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante   +17 more
wiley   +1 more source

Field-effect transistor replaces bulky transformer in analog-gate circuit [PDF]

open access: yes, 1965
Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits.

core   +1 more source

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