Results 251 to 260 of about 69,293 (324)

Gas sensors characterization and multilayer perceptron (MLP) hardware implementation for gas identification using a Field Programmable Gate Array (FPGA). [PDF]

Sensors (Basel), 2013
Benrekia F, Attari M, Bouhedda M.
europepmc   +1 more source

Direct Observation of Etching‐Induced Inhomogeneous Strain in Advanced Si/SiGe Stack for Gate‐All‐Around Transistor

Advanced Electronic Materials, EarlyView.
This work investigates the effect of anisotropic etching and selective isotropic etching of SiGe on the mechanical stability of Si nanosheets, visualizes the 2D strain distribution of Si/SiGe stack on atomic scale, providing valuable insights into the etching process recipe for advanced GAAFET manufacturing.
Lan Li, Ran Bi, Xiaomei Li, Zuoyuan Dong, Chao Yan, Shuying Wang, Pengpeng Ren, Ming Li, Xing Wu   +8 more
wiley   +1 more source

Implementing an encrypted display with the electron-induced colour router array. [PDF]

Light Sci Appl
Park H, Park M, Park Y.
europepmc   +1 more source

Continuous real-time photoacoustic demodulation via field programmable gate array for dynamic imaging of zebrafish cardiac cycle. [PDF]

Biomed Opt Express, 2013
Mattison SP, Shelton RL, Maxson RT, Applegate BE.   +3 more
europepmc   +1 more source

Field-Programmable-Gate-Array Based Signal Discrimination and Time Digitisation [PDF]

, 2013
Michel, J., Traxler, M., Ugur, C.
core  

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Electrically programmable pixelated coherent mid-infrared thermal emission. [PDF]

Nat Commun
Liu X, Zhong Y, Wang Z, Huang T, Lin S, Zou J, Wang H, Wang Z, Li Z, Luo X, Cheng R, Li J, Yun HS, Wang H, Kong J, Zhang X, Shen S.   +16 more
europepmc   +1 more source

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Advanced Electronic Materials, EarlyView.
A highly programmable memory function that occurs due to a charge tunneling and trapping mechanism is demonstrated in a Ge/GeSi heterostructure field‐effect thransistor. Over three orders‐of‐magnitude control over the conductance state of the device is achieved using either the device SET or the device RESET process, suggesting potential for ...
Adelaide Bradicich, Tzu‐Ming Lu
wiley   +1 more source

Simplified radar architecture based on information metasurface. [PDF]

Nat Commun
Wang SR, Chen ZY, Chen SN, Dai JY, Zhang JW, Qi ZJ, Wu LJ, Sun MK, Zhou QY, Li HD, Luo ZJ, Cheng Q, Cui TJ.   +12 more
europepmc   +1 more source

Quartz crystal microbalance based electronic nose system implemented on Field Programmable Gate Array

, 2019
Misbah Misbah, Muhammad Rivai, Fredy Kurniawan   +2 more
openalex   +2 more sources