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Ambipolar Field Effect Transistor
MRS Proceedings, 1985AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.
Hans Pfleiderer, Wilhelm Kusian
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Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
Nature Nanotechnology, 2020The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore’s law reaching its limits, the development of alternative transistor architectures is urgently needed 1 ...
Seungho Kim +9 more
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Photovoltage field-effect transistors
Nature, 2017The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of
Valerio, Adinolfi, Edward H, Sargent
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Detection Beyond Debye's Length with an Electrolyte‐Gated Organic Field‐Effect Transistor
Advanced Materials, 2015G. Palazzo +8 more
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Unipolar "Field-Effect" Transistor
Proceedings of the IRE, 1953Unipolar "field-effect" transistors of a type suggested by W. Shockley have been constructed and tested. The idealized theory of Shockley has been extended to cover the actual geometries involved, and design nomographs are presented. It is found that these structures can be designed in such a way as to yield a negative resistance at the input terminals.
G. C. DACEY, I. M. ROSS
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Field-effect transistor applications
1955 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1955A field effect transistor1 is a unipolar device, distinguishable from a junction transistor in the following two ways: 1. the current flow is carried predominantly by one type of carrier alone; and 2. the electric field intensity is relatively high, thus the current flow is caused by field drift instead of by diffusion. Fig. 1(A) shows the construction
Chaang Huang +2 more
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A ferroelectric semiconductor field-effect transistor
Nature Electronics, 2018Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device.
M. Si +11 more
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2007
Principles of field-effect transistors and their various types are reviewed. Their physical properties are surveyed, and a brief outline of present device technology is given.
Umesh K. Mishra, Jasprit Singh
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Principles of field-effect transistors and their various types are reviewed. Their physical properties are surveyed, and a brief outline of present device technology is given.
Umesh K. Mishra, Jasprit Singh
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Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse
Advanced Functional Materials, 2019With the incorporation of tailorable organic electronic materials as channel and storage materials, organic field‐effect transistor (OFET)‐based memory has become one of the most promising data storage technologies for hosting a variety of emerging ...
Yang Yu +10 more
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