Results 281 to 290 of about 1,480,230 (334)

Black phosphorus field-effect transistors.

Nature Nanotechnology, 2014
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding.
Likai Li, Yijun Yu, G. Ye, Q. Ge, Xuedong Ou, Hua-Yao Wu, D. Feng, Xian Hui Chen, Yuanbo Zhang   +8 more
semanticscholar   +1 more source

Ferroelectric Negative Capacitance Field Effect Transistor

Advanced Electronic Materials, 2018
With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover ...
Luqi Tu, Xudong Wang, Jianlu Wang, Xiangjian Meng, J. Chu   +4 more
semanticscholar   +1 more source

Metallic supercurrent field-effect transistor

Nature Nanotechnology, 2017
In their original formulation of superconductivity, the London brothers predicted1 the exponential suppression of an electrostatic field inside a superconductor over the so-called London penetration depth2–4, λL.
G. De Simoni, F. Paolucci, P. Solinas, E. Strambini, F. Giazotto   +4 more
semanticscholar   +1 more source

A Unipolar “Field-Effect” Transistor

Proceedings of the IRE, 1952
The theory for a new form of transistor is presented. This transistor is of the "field-effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field. Since the amplifying action involves currents carried pre-dominantly by one kind of carrier, the name "unipolar" is proposed to distinguish these ...
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Field-Effect Transistors

1983
Field-effect transistors are a more recent development than bipolar transistors, and make use of a completely different mechanism to achieve amplification of a signal. Field-effect transistors (FETs) are unipolar, and involve only one type of charge carrier (electrons or holes) in their operation.
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Field Effect Transistors

1988
The field effect transistor (FET) is a semiconductor device that depends for its operation on the control of current by an electric field. The FET has three terminals, these being the source, the drain and the gate. The gate acts as the control terminal, and the voltage applied between the gate and the source controls the flow of current between source
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The future of ferroelectric field-effect transistor technology

Nature Electronics, 2020
A. Khan, A. Keshavarzi, S. Datta
semanticscholar   +1 more source

Field Effect Transistors

Physics Bulletin, 1973
London: Mullard 1912 pp 132 price £1.80 This little book is a worthy addition to Mullard's occasional series of technical books. After an introductory survey chapters are devoted to the junction FET and to the MOSFET.
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Field Effect Transistors

2013
The idea of using an electric field to modulate the conductivity of a semiconductor was first proposed and patented by Lilienfeld in 1925 (Fig. 4.1). This type of field effect phenomenon is used today in various types of field effect transistors (FETs).
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Field Effect Transistors

Nature, 1971
Field Effect Electronics . By W. Gosling, W. G. Townsend and J. Watson. Pp. xvii + 364. (Butterworth: London, March 1971.) £8.
openaire   +1 more source