Results 21 to 30 of about 1,480,230 (334)

Implantable aptamer–field-effect transistor neuroprobes for in vivo neurotransmitter monitoring

Science Advances, 2021
Implantable aptamer transistor probes for in vivo neurotransmitter monitoring advance brain activity recording.
Chuanzhen Zhao, Kevin M. Cheung, I-Wen Huang, Hongyan Yang, Nako Nakatsuka, Wenfei Liu, Yan Cao, Tianxing Man, Paul S. Weiss, H. Monbouquette, A. M. Andrews   +10 more
semanticscholar   +1 more source

Increasing the sensitivity and radiation resistance of temperature sensor-converters using generators based on unijunction transistors

Технологія та конструювання в електронній апаратурі, 2023
The authors experimentally study the influence of temperature and radiation on the characteristics of generators based on a unijunction transistor (UJT).
Ivan Vikulin, Lidiya Vikulinа, Pavlo Markolenko, Oleksandr Nazarenko   +3 more
doaj   +1 more source

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

Advanced Electronic Materials, 2020
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer ...
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber   +11 more
doaj   +1 more source

Quantum spin field effect transistor [PDF]

, 2002
We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current.
A. Brataas, A. P. Jauho, B. G. Wang, Baigeng Wang, C. M. Hu, E. R. Mucciolo, F. Zhou, G. A. Prinz, G. Schmidt, Hong Guo, J. A. Gupta, J. E. Avron, J. E. Hirsch, J. M. Kikkawa, J. Wang, Jian Wang, K. Tsukagoshi, M. Moskalets, M. N. Baibich, M. V. Berry, P. Sharma, P. W. Brouwer, Q. Niu, R. Meservey, S. A. Wolf, S. Asai, S. Datta, T. A. Shutenko, V. H. Crespi, X. Blase, Y. A. Krotov, Y. D. Wei, Y. D. Wei, Y. Levinson, Y. Ohno   +34 more
core   +2 more sources

The Behavioural Model of Graphene Field-effect Transistor [PDF]

International Journal of Electronics and Telecommunications, 2020
The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly.
Maciej Łuszczek, Marek Turzyński, Dariusz Świsulski   +2 more
doaj   +1 more source

Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

Journal of Optoelectronical Nanostructures, 2022
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand, Zahra Ahangari, Hamed Nematian   +2 more
doaj   +1 more source

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [PDF]

Science, 2011
Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there is also an effective way of creating a barrier to current flow so that the ...
L. Britnell, R. Gorbachev, R. Jalil, B. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. Katsnelson, L. Eaves, S. Morozov, N. Peres, J. Leist, A.K. Geim, K. Novoselov, L. Ponomarenko   +14 more
semanticscholar   +1 more source

Experimental studies and a double gate JFET model for analog integrated circuits

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2021
One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing with ...
Y. D. Galkin, O. V. Dvornikov, V. A. Tchekhovski, N. N. Prokopenko   +3 more
doaj   +1 more source

Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit [PDF]

Журнал нано- та електронної фізики, 2017
This paper proposes the novel low power and area efficient ALU (Arithmetic and Logic Unit) using adder and multiplexers. The adder and multiplexer are realized by using CNTFET (Carbon Nano Tube Field Effect Transistor) A verilog model of MOSFET (Metal ...
K.В Nehru, T.В Nagarjuna, G.В Vijay   +2 more
doaj   +1 more source

Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]

Журнал нано- та електронної фізики, 2017
Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh, R.S. Gupta, Sujata Pandey   +2 more
doaj   +1 more source