Results 41 to 50 of about 40,986 (300)
IEEE Journal of the Electron Devices Society, 2015 In this paper, we have utilized a poly(vinylidene difluoride) poly(styrene) sulfonic acid patterned ion-conducting membrane as a platform onto which electronics based on both depletion mode and enhancement mode ion-modulated transistors have been built ...
Fredrik Pettersson +6 more
doaj +1 more source
Sensitivity of Field-Effect Transistor-Based Terahertz Detectors
Sensors, 2021 This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result may
Elham Javadi +5 more
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Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
Advanced Science, 2022 To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek +9 more
doaj +1 more source
Applications of Transistor-Based Biochemical Sensors
Biosensors, 2023 Transistor-based biochemical sensors feature easy integration with electronic circuits and non-invasive real-time detection. They have been widely used in intelligent wearable devices, electronic skins, and biological analyses and have shown broad ...
Qiya Gao, Jie Fu, Shuang Li, Dong Ming
doaj +1 more source
The ferroelectric field-effect transistor with negative capacitance
npj Computational Materials, 2022 Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Gas sensing using an organic/silicon hybrid field-effect transistor [PDF]
, 1996 This thesis describes the fabrication and properties of novel organic/silicon hybrid field-effect transistor gas sensors. Whilst most of the work used the emeraldine base form of the conductive polymer polyaniline, the response of a device incorporating ...
Barker, Paul Simon
core
Multilayer MoS2 Schottky Barrier Field Effect Transistor
IEEE Open Journal of NanotechnologyThe miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB ...
Sebastiano De Stefano +7 more
doaj +1 more source
A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor
Micromachines, 2022 A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
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Advanced Functional Materials, EarlyView.Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source