Results 51 to 60 of about 1,480,230 (334)

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor

Micromachines, 2022
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
doaj   +1 more source

Delta-doped β-gallium oxide field-effect transistor [PDF]

, 2017
We report silicon delta doping in gallium oxide (β-Ga2O3) grown by plasma-assisted molecular beam epitaxy using a shutter pulsing technique. We describe the growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma
S. Krishnamoorthy, Zhanbo Xia, S. Bajaj, M. Brenner, S. Rajan   +4 more
semanticscholar   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Multilayer MoS₂ Schottky Barrier Field Effect Transistor

IEEE Open Journal of Nanotechnology
The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB ...
Sebastiano De Stefano, Alfredo Spuri, Raffaele Barbella, Ofelia Durante, Adolfo Mazzotti, Andrea Sessa, Angelo Di Bernardo, Antonio Di Bartolomeo   +7 more
doaj   +1 more source

Microwave field effect transistor [PDF]

, 1989
Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium ...
Huang, Ho-Chung
core   +1 more source

A tunable, dual mode field-effect or single electron transistor

, 2012
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali, B. Roche, B. Voisin, Fenouillet-Beranger C., M. Sanquer, M. Vinet, R. Wacquez, V. Deshpande, Weber O., X. Jehl   +9 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

High Ion/Ioff current ratio graphene field effect transistor: the role of line defect

Beilstein Journal of Nanotechnology, 2015
The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect
Mohammad Hadi Tajarrod, Hassan Rasooli Saghai   +1 more
doaj   +1 more source

Low noise tuned amplifier [PDF]

, 1984
A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge ...
Kleinberg, L. L.
core   +1 more source

Ferroelectric field effect transistors for electronics and optoelectronics

Applied Physics Reviews, 2023
Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET)
H. Jiao, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, Jianlu Wang   +5 more
semanticscholar   +1 more source