Results 71 to 80 of about 1,480,230 (334)

Nanopore extended field-effect transistor for selective single-molecule biosensing

open access: yesNature Communications, 2017
There has been a significant drive to deliver nanotechnological solutions to biosensing, yet there remains an unmet need in the development of biosensors that are affordable, integrated, fast, capable of multiplexed detection, and offer high selectivity ...
Ren Ren   +7 more
semanticscholar   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Insulated-gate field-effect transistor strain sensor [PDF]

open access: yes, 1972
Strain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation.
Gross, C.
core   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker   +11 more
wiley   +1 more source

Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy

open access: yesAIP Advances, 2013
Accurate measurement of the strain field in the channels of transistor arrays is critical for strain engineering in modern electronic devices. We applied atomic-resolution high-angle annular dark-field scanning transmission electron microscopy to ...
Suhyun Kim   +7 more
doaj   +1 more source

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance [PDF]

open access: yes, 2010
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS.
Gao, Yunfei   +3 more
core   +3 more sources

Field-Effect Transistor Biosensor for Rapid Detection of Ebola Antigen

open access: yesScientific Reports, 2017
The Ebola virus transmits a highly contagious, frequently fatal human disease for which there is no specific antiviral treatment. Therefore, rapid, accurate, and early diagnosis of Ebola virus disease (EVD) is critical to public health containment ...
Yantao Chen   +8 more
semanticscholar   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji   +9 more
wiley   +1 more source

Ion-Sensitive Field-Effect Transistor for Biological Sensing

open access: yesSensors, 2009
In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing ...
Chang-Soo Lee, Sang Kyu Kim, Moonil Kim
doaj   +1 more source

Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor.

open access: yesNano letters (Print), 2018
P-type two-dimensional steep-slope negative capacitance field-effect transistors are demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium zirconium oxide in gate dielectric stack.
M. Si   +5 more
semanticscholar   +1 more source

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