Results 91 to 100 of about 1,480,230 (334)

From Coherent States In Adjacent Graphene Layers Toward Low-Power Logic Circuits [PDF]

, 2011
Colleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene.
Basu, D., Reddy, D., Register, L. F.
core   +1 more source

Harnessing the Orientation of Columnar Discotic Liquid Crystals for Narrowband Blue Emission with Enhanced Out‐Coupling Efficiency Toward Improvement of SP‐OLEDs Performance

Advanced Functional Materials, EarlyView.
Solution‐processed OLEDs containing discotic liquid‐crystalline MR‐TADF emitters are reported. Supramolecular self‐assembly induces homeotropic columnar alignment, enforcing preferential horizontal orientation of the emitter transition dipole moment in spin‐coated films, which leads to an enhancement in the device light outcoupling efficiency while ...
Joydip De, Abhishek Kumar Gupta, Džiugas Litvinas, Francisco Tenopala‐Carmona, Matthias Lehmann, Malte C. Gather, Eli Zysman‐Colman   +6 more
wiley   +1 more source

In-Line Tunnel Field Effect Transistor: Drive Current Improvement

IEEE Journal of the Electron Devices Society, 2018
A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park, Amir N. Hanna, Arwa T. Kutbee, Muhammad Mustafa Hussain   +3 more
doaj   +1 more source

Spin Electronics and Spin Computation

, 2001
We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent ...
Andreev, Awschalom, Bacon, Balents, Barnes, Belzig, Bennett, Blonder, Burkard, Das Sarma, Datta, de Jong, Deutsch, Deutsch, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, Dong, Ekert, Feynman, Feynman, Fiederling, Goldman, Hammar, Hu, Hu, Igor Z̆utić, Imamoglu, Imamoglu, Jaroslav Fabian, Johnson, Johnson, Kane, Kane, Kane, Kashiwaya, Kikkawa, Kikkawa, Kikkawa, Kulić, Lidar, Loss, Medvedkin, Meier, Monsma, Monsma, Nitta, Oestreich, Ohno, Ohno, Pellizzari, Prinz, Privman, S. Das Sarma, Schmidt, Shor, Shor, Soulen, Steane, Steane, Tedrow, Tsukagoshi, Upadhyay, Va'sko, van Son, Vrijen, Wolf, Worledge, Xuedong Hu, Yamaguchi, Zhu, Z̆utić, Z̆utić, Z̆utić   +76 more
core   +2 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Complexation‐Mediated Diffusion‐Limited Crystal Growth: A General Framework for Anisotropic Crystal Growth in Cu‐Based Perovskites

Advanced Functional Materials, EarlyView.
A Complexation‐Mediated Diffusion‐Limited Growth (CMDLG) framework is established to rationalize the anisotropic growth of lead‐free perovskites. Integrating coordination chemistry with mass transport kinetics, this study theoretically derives and experimentally validates that stable iodocuprate complexes induce a diffusion‐limited regime.
Hyunmin Lee, Mu Geun Son, Thanh Van Vu, Hokyeong Jeong, Joonhee Kang, Youngjong Kang   +5 more
wiley   +1 more source

MOS field-effect-transistor technology [PDF]

Metal oxide semiconductor field effect transistor circuit development and laminated electronic packaging for computer storage ...
Boesenberg, W. A., Flatley, D., Parker, H., Ross, E. C., Wallmark, J. T.   +4 more
core   +1 more source

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.

Nano letters (Print), 2016
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths.
A. Nourbakhsh, Ahmad Zubair, R. Sajjad, A. Tavakkoli K. G., Wei Chen, S. Fang, X. Ling, J. Kong, M. Dresselhaus, E. Kaxiras, K. Berggren, D. Antoniadis, T. Palacios   +12 more
semanticscholar   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source

Signal conditioner circuit for photomultiplier tube [PDF]

, 1970
Miniaturized circuit improves measurement of radiation dose absorbed in a scintillation crystal. The temperature coefficient of the field-effect transistor gate-source voltage in the isolation amplifier can be readily ...
Cellier, A., Hoover, W. M.
core   +1 more source