Results 91 to 100 of about 15,726,423 (289)

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

open access: yesAdvanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung   +17 more
wiley   +1 more source

NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]

open access: yes, 2012
We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A.   +10 more
core   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Fast Cyclic Voltammetry of Self-assembled Alkanethiol and Hybridized DNA on Gold Plates for Novel Field Effect Transistor Sensors

open access: yes, 2008
Fast Cyclic Voltammetry of Self-assembled Alkanethiol and Hybridized DNA on Gold Plates for Novel Field Effect Transistor ...
徐芬, 孙立贤, 曹忠
core  

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj   +4 more
wiley   +1 more source

Nanomaterials-based Field Effect Transistor biosensor for cancer therapy

open access: yesNext Nanotechnology
Biosensors made of nanomaterials play a prominent part in diagnostic applications in the biomedical domain. The peculiar characteristics of nanomaterials including quantum effects, self-assembly, and larger surface area make them an irresistible choice ...
Silpa Sasikumar   +3 more
doaj   +1 more source

Um modelo eficiente do transistor MOS para o projeto de circuitos VLSI: [dissertação] [PDF]

open access: yes, 2007
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.Neste trabalho é detalhada a implementação do modelo ACM do transistor MOS no simulador elétrico ELDO (Mentor Graphics).
Siebel, Osmar Franca
core  

Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures

open access: yesAdvanced Functional Materials, EarlyView.
In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash   +6 more
wiley   +1 more source

A Study on Graphene—Metal Contact

open access: yesCrystals, 2013
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 ...
Hongyu Yu   +3 more
doaj   +1 more source

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

open access: yesAdvanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll   +17 more
wiley   +1 more source

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