Results 101 to 110 of about 1,480,230 (334)

Multiple Functionality in Nanotube Transistors

, 2002
Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions.
A. Odintsov, A. S. Maksimenko, C. Dekker, C. Zhou, F. Léonard, F. Léonard, F. Léonard, François Léonard, H. Ago, H. Mehrez, J. Tersoff, J. W. G. Wildöer, K. Esfarjani, K. Tsukagoshi, Kolagunta, P. Hylgaard, P. L. McEuen, R. Martel, S. Datta, S. J. Tans, S. Suzuki, T. W. Odom   +21 more
core   +1 more source

Photon Avalanching Nanoparticles: The Next Generation of Upconverting Nanomaterials?

Advanced Functional Materials, EarlyView.
This Perspective outlines the mechanistic foundations that enable photon‐avalanche (PA) behavior in lanthanide nanomaterials and contrasts them with emerging application spaces and forward‐looking design strategies. By bridging threshold engineering, energy‐transfer dynamics, and materials engineering, we provide a coherent roadmap for advancing the ...
Kimoon Lee, Yunseo Kim, Hyeong‐ku Jo, Dongjoon Yoon, Byeonghyeok Im, WonJeong Yu, Eui‐Rim On, Changhwan Lee   +7 more
wiley   +1 more source

Constant current source for converting absolute temperatures to analog voltages [PDF]

, 1970
Circuit configuration consisting of matched differential amplifier, temperature compensated zener diode, and low pinchoff-voltage field effect transistor provides accurate and stable current supply for temperature sensor ...
Padilla, J. R.
core   +1 more source

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

, 2018
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4].
A Damascelli, AA Soluyanov, AD Becke, Anton Tadich, B Deng, C Niu, Chang Liu, D Koller, F Reis, F Tran, H Pan, Hyejin Ryu, I Battisti, I Souza, J Hellerstedt, J Liu, J Voit, J Wu, Jack Hellerstedt, James L. Collins, JM Blanco, JM Pitarke, Joao N. B. Rodrigues, JP Perdew, JP Perdew, L Ju, Lidia C. Gomes, M König, Mark T. Edmonds, Michael S. Fuhrer, MP Lopez Sancho, MT Edmonds, MT Edmonds, ND Lang, PE Blöchl, Q Wu, R Yu, S Borisenko, S Hufner, S Tang, S Wu, Shaffique Adam, Shengyuan A. Yang, Shujie Tang, Sung-Kwan Mo, T Ohta, T Schumann, Weikang Wu, WG Vandenberghe, X Qian, Y Zhang, Y Zhang, Z Fei, Z Wang, ZK Liu, ZK Liu   +55 more
core   +1 more source

Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

Nature Communications, 2016
Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties.
Jangyup Son, Soogil Lee, Sang Jin Kim, B. Park, Han‐Koo Lee, Sanghoon Kim, J. Kim, B. Hong, Jongill Hong   +8 more
semanticscholar   +1 more source

Bio‐Inspired Multimodal Hardware Front‐End Enabled by 2D Floating‐Gate Memory for UAV Perception

Advanced Functional Materials, EarlyView.
A MoS2/h‐BN /graphene floating‐gate memory underpins a bio‐inspired multimodal front end that integrates visual, inertial, and airflow cues. A 4 × 4 FG memory array encodes temporal intensity differences, while IMU‐ and airflow‐driven threshold modulation suppresses self‐motion artifacts, enabling fast, low‐power, robust autonomous UAV tracking and ...
Lianghao Guo, Yue Cheng, Cong Li, Xiaoyu Guo, Jiankai Yin, Dadong Fan, Zhenyu Xu, Chenyu Tang, Arokia Nathan, Shuo Gao, Li Tao, Luigi G. Occhipinti   +11 more
wiley   +1 more source

Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

, 2017
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A., Conrad, Nathan J., Jiang, Chunsheng, Maize, Kerry D., Qiu, Gang, Shakouri, Ali, Si, Mengwei, Su, Chun-Jung, Wu, Chien-Ting, Ye, Peide D., Zhou, Hong   +10 more
core   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

Advanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee, Sumin Hong, Minho Park, Seongju Kim, Sanghoon Baek, Seonguk Yang, Chang‐Soo Lee, Sang‐Hoon Bae, Joonki Suh, Yongwoo Lee, Haksoon Jung, Jimin Kwon   +11 more
wiley   +1 more source

Transport and Field Emission Properties of MoS2 Bilayers

Nanomaterials, 2018
We report the electrical characterization and field emission properties of MoS 2
Francesca Urban, Maurizio Passacantando, Filippo Giubileo, Laura Iemmo, Antonio Di Bartolomeo   +4 more
doaj   +1 more source

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

, 2005
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode.
Chong, Lit Ho, de Groot, C. H., Mallik, Kanad   +2 more
core   +1 more source