Results 81 to 90 of about 1,480,230 (334)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Graphene field-effect transistor application for flow sensing

EPJ Web of Conferences, 2017
Microflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature ...
Łuszczek Maciej, Świsulski Dariusz, Hanus Robert, Zych Marcin, Petryka Leszek   +4 more
doaj   +1 more source

Field effect transistor and method of construction thereof [PDF]

, 1978
A field effect transistor is constructed by placing a semi-conductor layer on an insulating substrate so that the gate region is separated from source and drain regions. The gate electrode and gate region of the layer are of generally reduced length, the
Fletner, W. R.
core   +1 more source

Review of: "(Field effect nano transistors) Nano transistor electronic quantity"

Qeios, 2023
Linda Brouce
semanticscholar   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Field effect transistor biosensors for healthcare monitoring

Interdisciplinary Medicine
The burgeoning demand for healthcare monitoring has brought field effect transistor (FET) biosensors into the spotlight as a highly efficient detection technology. FET biosensors offer inherent advantages including high sensitivity, rapid response times,
Zhicheng Zhang, Jing‐Jing Hu, Shijun Lin, Jiajun Wu, Fan Xia, Xiaoding Lou   +5 more
doaj   +1 more source

SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor [PDF]

, 2013
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a
Feenstra, Randall M., Gu, Gong, Jena, Debdeep, Zhao, Pei   +3 more
core   +2 more sources

Review of: "(Field effect nano transistors) Nano transistor electronic quantity and ionization potential)"

Qeios, 2023
Afshin Rashid
semanticscholar   +1 more source

Antiferromagnetic Spin Wave Field-Effect Transistor [PDF]

Scientific Reports, 2015
In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel ...
R. Cheng, M. Daniels, Jianbao Zhu, Di Xiao   +3 more
semanticscholar   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source