Results 121 to 130 of about 1,480,230 (334)
Structural and Chemical Engineering of Sub‐Nanochannel Membranes Toward Ion Selectivity
Advanced Functional Materials, EarlyView.This review summarizes recent advances in structural and chemical engineering of sub‐nanochannels for ion selectivity. We first introduce fundamental ion transport mechanisms within sub‐nanochannels, followed by strategies to tune pore size, geometry, and surface functionalities, categorized into charge‐based, ion‐recognition, hydrophilic bonding, and ...
Yuyu Su +5 more
wiley +1 more source
Field-effect transistor replaces bulky transformer in analog-gate circuit [PDF]
, 1965 Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits.
core +1 more source
Advanced Functional Materials, EarlyView.Selenium‐incorporated polymerized nonfullerene acceptor PCB2Se forms a strong supramolecular complex with SWCNTs, enabling a record‐high zT of 0.29. Sequential N‐DMBI doping, mediated through a polymer‐assisted electron‐transfer pathway, successfully converts the PCB2Se/SWCNT composite into an efficient n‐type material with an impressive power factor ...
Chi‐Chun Tseng +8 more
wiley +1 more source
A Study on Graphene—Metal Contact
Crystals, 2013 The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 ...
Hongyu Yu +3 more
doaj +1 more source
Investigation of new concepts of adaptive devices Quarterly technical report, 15 Jun. - 14 Sep. 1967 [PDF]
Insulated gate field effect transistor with adaptive and memory ...
Lincoln, A. J. +2 more
core +1 more source
Advanced Functional Materials, EarlyView.Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
An investigation of the effects of radiation on silicon nitride insulated gate /MNS/ transistors Final report [PDF]
Radiation effects on silicon nitride insulated gate field effect ...
Frank, R., Sewell, F., Wegener, H. A. R.
core +1 more source
Polarographic carbon dioxide transducer amplifier [PDF]
, 1971 Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability.
Stillman, G.
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Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors
Advanced Functional Materials, EarlyView.Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee +5 more
wiley +1 more source