Results 111 to 120 of about 1,480,230 (334)

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

open access: yesAdvanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun   +8 more
wiley   +1 more source

TECHNOLOGY OF MANUFACTURING OF TRANSISTOR STRUCTURES POWER ELECTRONICS

open access: yesВестник Дагестанского государственного технического университета: Технические науки, 2016
It is proved that a prospective direction of electronic power development are intelligent power components: integrated power ICS and modules. Power electronic devices in the field of switched currents up to 50 A are arranged.
T. E. Sarkarov   +2 more
doaj   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li   +5 more
wiley   +1 more source

Kinetic Regimes of Hydrogen Absorption in Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco   +7 more
wiley   +1 more source

Unlocking Photodetection Mode Switching from a Simple Lateral Design

open access: yesAdvanced Functional Materials, EarlyView.
A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong   +10 more
wiley   +1 more source

Nanomaterials-based Field Effect Transistor biosensor for cancer therapy

open access: yesNext Nanotechnology
Biosensors made of nanomaterials play a prominent part in diagnostic applications in the biomedical domain. The peculiar characteristics of nanomaterials including quantum effects, self-assembly, and larger surface area make them an irresistible choice ...
Silpa Sasikumar   +3 more
doaj   +1 more source

Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor [PDF]

open access: yes, 2008
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-
Chen, Yu   +4 more
core  

Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor

open access: yes, 2019
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state.
Askari, Hesam   +7 more
core   +1 more source

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