Results 211 to 220 of about 71,483 (292)
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
Hardware Accelerators for Cardiovascular Signal Processing: A System-on-Chip Perspective. [PDF]
Hariri R +4 more
europepmc +1 more source
ReRAM/CMOS Array Integration and Characterization via Design of Experiments
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen +7 more
wiley +1 more source
NEO-PGA: Nonvolatile electro-optically programmable gate array. [PDF]
Chen R +6 more
europepmc +1 more source
A diagnostic method for reconfigurable intelligent surfaces (RIS) based on non‐uniform space‐time‐coding modulation is presented. Fault localization is achieved via amplitude‐only spectral measurements, eliminating the need for complex signal processing. A one‐to‐one mapping between harmonic components and RIS elements enables accurate detection.
Xiao Qing Chen +8 more
wiley +1 more source
Programmable digital printing of organic single crystals for integrated electronics. [PDF]
Li C +10 more
europepmc +1 more source
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source
Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision. [PDF]
Huo J +8 more
europepmc +1 more source
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka +6 more
wiley +1 more source

