Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]
Chen X, Wang Z, Meng J, Wang T.
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Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
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HZO/HSO Superlattice ReFET Array Integrating Optical Sensing for Neuromorphic Vision Computing. [PDF]
Dang B +10 more
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Implementing an encrypted display with the electron-induced colour router array. [PDF]
Park H, Park M, Park Y.
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Time aware cyclic queuing forwarding traffic scheduling algorithm considering reallocation and priority sorting (RPS-TACQF). [PDF]
Shen Y, Chen X, Ma X.
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Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]
Dub M +10 more
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A field-programmable gate array based on wafer-scale 2D semiconductor. [PDF]
Sun Q +13 more
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A Fully Integrated Monolithic Monitor for Aging-Induced Leakage Current Characterization. [PDF]
Darko EN +4 more
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Antifuse field programmable gate arrays
Proceedings of the IEEE, 1993An antifuse is an electrically programmable two-terminal device with small area and low parasitic resistance and capacitance. Field-programmable gate arrays (FPGAs) using antifuses in a segmented channel routing architecture now offer the digital logic capabilities of an 8000-gate conventional gate array and system speeds of 40-60 MHz.
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