Results 241 to 250 of about 1,944,228 (298)
Enhanced Rashba Effect and Optical Absorption in 2D Janus XMoYZ<sub>2</sub> (X = S/Se/Te; Y = Si/Ge; Z = N/P): A First-Principles Study. [PDF]
Liu X +7 more
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Field-free control of magnetism and electronic states in ZGNR/h-BN heterojunctions <i>via</i> topological line defects. [PDF]
Shan G, Chen W, Liu W.
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Mechanical characterization of Bi-2212 composite winding pack samples for high-field superconducting magnet design. [PDF]
Martin E +8 more
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Evaluating cross-resistance and synergy between Vip3Aa and Cry proteins from Bt in six strains of Helicoverpa zea derived via F<sub>2</sub> screens. [PDF]
Wang Y +5 more
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Singular Fields in Plane-Strain Penetration
Journal of Applied Mechanics, 1991Local singular fields are investigated in the vicinity of the vertex of a sharp wedge that penetrates a viscous solid. Material behavior is modeled by the usual powerlaw constitutive relation. Wall friction is accounted for by imposing friction factors along the walls of the wedge.
Durban, David, Rand, Omri
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Optical in-plane strain field sensor
Applied Optics, 2002A whole-field speckle strain sensor is presented. The speckle strain sensor allows the measurement of all three in-plane components of the strain field simultaneously without touching the surface of the sample. The strain fields are extracted from the in-plane motion of defocused laser speckles in a telecentric imaging system.
Per, Synnergren, Mikael, Sjödahl
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2009
As we discussed in Chapter 24, bending of the lattice planes causes a change in the diffraction conditions and therefore a change in the contrast of the image. The presence of a lattice defect in the specimen causes the planes to bend close to the defect.
David B. Williams, C. Barry Carter
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As we discussed in Chapter 24, bending of the lattice planes causes a change in the diffraction conditions and therefore a change in the contrast of the image. The presence of a lattice defect in the specimen causes the planes to bend close to the defect.
David B. Williams, C. Barry Carter
openaire +1 more source
Finite-element study of strain field in strained-Si MOSFET
Micron, 2009The strain field in the channel of a p-type metal-oxide-semiconductor field effect transistor fabricated by integrating Ge pre-amorphization implantation for source/drain regions is evaluated using a finite-element method combining with large angle convergent-beam electron diffraction (LACBED).
H H, Liu, X F, Duan, Q X, Xu
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