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A full-featured 2D flash chip enabled by system integration. [PDF]
NatureLiu C +13 more
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Empirical Evaluation of Unoptimized Sorting Algorithms on 8-Bit AVR Arduino Microcontrollers. [PDF]
Sensors (Basel)Golonka J, Krużel F.
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ACS Nano, 2011
Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of ...
Jiyoung Kim, Jin Zou, Richard B Kaner
exaly +6 more sources
Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of ...
Jiyoung Kim, Jin Zou, Richard B Kaner
exaly +6 more sources
Flash memory cells-an overview
Proceedings of the IEEE, 1997The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and
Paolo Pavan, Piero Olivo
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Proceedings of the IEEE, 2003
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic functionality of the memory cell used so far and the main cell architecture consolidated today. The NOR cell is basically a floating-gate MOS transistor, programmed by channel hot electron and erased by Fowler-Nordheim tunneling ...
Alberto Modelli
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This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic functionality of the memory cell used so far and the main cell architecture consolidated today. The NOR cell is basically a floating-gate MOS transistor, programmed by channel hot electron and erased by Fowler-Nordheim tunneling ...
Alberto Modelli
exaly +2 more sources
VLSI Design 2000. Wireless and Digital Imaging in the Millennium. Proceedings of 13th International Conference on VLSI Design, 2002
Flash memories can undergo three different types of disturbances, DC-programming, DC-erasure, and drain disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults.
Mohammad Gh. Mohammad +2 more
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Flash memories can undergo three different types of disturbances, DC-programming, DC-erasure, and drain disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults.
Mohammad Gh. Mohammad +2 more
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A survey of flash memory design and implementation of database in flash memory
2008 3rd International Conference on Intelligent System and Knowledge Engineering, 2008Flash memory is getting more popularity for its non-volatility, shock resistance, no mechanical delay and random access. Increasing size of flash memory as well as decrease in price has strengthened the possibility of replacing hard disk in near future.
Aminul Haque Chowdhury, Ki-Hyung Kim
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On the Capacity and Programming of Flash Memories
IEEE Transactions on Information Theory, 2012zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Anxiao Jiang, Hao Li, Jehoshua Bruck
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1999
Most of the current applications of electronics require non-volatile memories, which can keep stored information when the power supply is switched off. Flash memories (in which a single cell can be electrically programmed and a large number of cells are usually electrically erased at the same time) are the most versatile non-volatile memories. They are
P. CAPPELLETTI +3 more
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Most of the current applications of electronics require non-volatile memories, which can keep stored information when the power supply is switched off. Flash memories (in which a single cell can be electrically programmed and a large number of cells are usually electrically erased at the same time) are the most versatile non-volatile memories. They are
P. CAPPELLETTI +3 more
+5 more sources
1999
Solid-state memory devices which retain information once the power supply is switched off are called “nonvolatile” memories. For instance, using standard digital technology, a nonvolatile memory can be implemented by writing permanently the data in the memory array during manufacturing (mask-programmed Read Only Memories, ROM).
OLIVO, Piero, E. ZANONI
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Solid-state memory devices which retain information once the power supply is switched off are called “nonvolatile” memories. For instance, using standard digital technology, a nonvolatile memory can be implemented by writing permanently the data in the memory array during manufacturing (mask-programmed Read Only Memories, ROM).
OLIVO, Piero, E. ZANONI
openaire +2 more sources