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The Fundamentals of NAND Flash Memory: Technology for tomorrow’s fourth industrial revolution
IEEE Solid-State Circuits Magazine, 2022With the rise of the mobile-centric era, data-driven applications such as the Internet of Things, artificial intelligence, cloud computing, blockchain, and so on are ever increasing.
Chi-Weon Yoon
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PVSensing: A Process-Variation-Aware Space Allocation Strategy for 3D NAND Flash Memory
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2022Three-dimensional (3D) flash memory is an emerging memory technology that enables a number of improvements to conventional planar NAND flash memory, including larger capacity, less program disturb, and lower access latency.
Yi Wang +3 more
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Layer-to-Layer Endurance Variation of 3D NAND Flash Memory
IEEE International Reliability Physics Symposium, 2022The block size of flash memory chips has increased significantly with the introduction of 3D NAND technology, causing "big-block" management issues in storage systems.
M. Raquibuzzaman +3 more
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2022
3-D NAND flash memory with vertically stacked layers has been widely applied benefiting from its large capacities and high performances. Recently, a novel open block operation scheme was proposed for further improvements of the utilization efficiency in ...
Menghua Jia +5 more
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3-D NAND flash memory with vertically stacked layers has been widely applied benefiting from its large capacities and high performances. Recently, a novel open block operation scheme was proposed for further improvements of the utilization efficiency in ...
Menghua Jia +5 more
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ParaBit: Processing Parallel Bitwise Operations in NAND Flash Memory based SSDs
Micro, 2021Processing-in-memory (PIM) and in-storage-computing (ISC) architectures have been constructed to implement computation inside memory and near storage, respectively. While effectively mitigating the overhead of data movement from memory and storage to the
Congming Gao +5 more
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IEEE International Solid-State Circuits Conference, 2022
Triple-level-cell (TLC) NAND has prevailed the non-volatile memory market, yet the quad-level-cell (QLC) NAND is emerging as a suitable replacement for low-cost and high-density storage.
Wanik Cho +48 more
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Triple-level-cell (TLC) NAND has prevailed the non-volatile memory market, yet the quad-level-cell (QLC) NAND is emerging as a suitable replacement for low-cost and high-density storage.
Wanik Cho +48 more
semanticscholar +1 more source
How the common retention acceleration method of 3D NAND flash memory goes wrong?
USENIX Workshop on Hot Topics in Storage and File Systems, 2021The reliability of solid-state drives (SSDs) has become increasingly important as SSDs are now widely applied in data centers. Retention error is a major source of impact on the reliability of SSDs.
Qiao Li, Min Ye, Tei-Wei Kuo, C. Xue
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Instant data sanitization on multi-level-cell NAND flash memory
Annual Haifa Experimental Systems Conference, 2022Deleting data instantly from NAND flash memories incurs hefty overheads, and increases wear level. Existing solutions involve unlinking the physical page addresses making data inaccessible through standard interfaces, but they carry the risk of data ...
M. Raquibuzzaman +3 more
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Radiation effects on NAND Flash memories
2010Electronic chips operating at sea level are constantly bombarded by a shower of high-energy neutrons, which originate from the interactions of cosmic rays with the outer layers of the atmosphere. The neutron flux changes with altitude, reaching a peak very close to the cruise altitude of airplanes, posing an even more serious threat to avionics.
BAGATIN, MARTA +3 more
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Novel Method Enabling Forward and Backward Propagations in NAND Flash Memory for On-Chip Learning
IEEE Transactions on Electron Devices, 2021In this work, a novel synaptic array architecture enabling forward propagation (FP) and backward propagation (BP) in the NAND flash memory is proposed for the first time for on-chip learning.
Sungtae Lee +7 more
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