Results 41 to 50 of about 29,727 (252)
Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile
IEEE Access, 2022 The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
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EDACs and test integration strategies for NAND flash memories [PDF]
, 2010 Mission-critical applications usually presents several critical issues: the required level of dependability of the whole mission always implies to address different and contrasting dimensions and to evaluate the tradeoffs among them. A mass-memory device
Piazza, R. +9 more
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Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories
Micromachines, 2021 Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen +6 more
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A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories [PDF]
, 2012 In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) NAND Flash memories is evolving fast in an attempt to improve the uncorrected/miscorrected bit error rate (UBER) and to provide a more flexible usage ...
C. Zambelli +19 more
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A NAND Flash Memory Controller for SD/MMC Flash Memory Card [PDF]
2006 13th IEEE International Conference on Electronics, Circuits and Systems, 2006 In this paper, a novel NAND Flash Memory Controller was designed. A t-EC w-bit parallel BCH ECC code was designed for correcting the random bit errors of the flash memory chip, which is suitable for the randomly bit errors property and parallel I/O interface of the NAND type Flash memory. A Code-Banking mechanism was designed for the trade-offs between
Chuan-Sheng Lin +3 more
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Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects
AIP Advances, 2023 In order to develop the shift model of threshold voltage distribution of the memory array in a radiation environment based on the bit upset test results of NAND Flash and study the coupling effect caused by the simultaneous performance degradation of ...
Jiangkun Sheng +8 more
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FLARE: A design environment for FLASH-based space applications [PDF]
, 2009 Designing a mass-memory device (i.e., a solid-state recorder) is one of the typical issues of mission-critical space system applications. Flash-memories could be used for this goal: a huge number of parameters and trade-offs need to be explored.
Stefano Di Carlo +8 more
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IEEE Journal of the Electron Devices Society, 2019 We propose a designing of multi-layer neural networks using 2D NAND flash memory cell as a high-density and reliable synaptic device. Our operation scheme eliminates the waste of NAND flash cells and allows analogue input values.
Sung-Tae Lee +6 more
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Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen +7 more
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System-Technology Codesign of 3-D NAND Flash-Based Compute-in-Memory Inference Engine
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021 Due to its ultrahigh density and commercially matured fabrication technology, 3-D NAND flash memory has been proposed as an attractive candidate of inference engine for deep neural network (DNN) workloads.
Wonbo Shim, Shimeng Yu
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