Results 41 to 50 of about 1,986,606 (160)

3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio

AIP Advances, 2022
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +7 more
doaj   +1 more source

Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3-D NAND Flash Memory With a Non-Uniform Doping Profile

IEEE Journal of the Electron Devices Society, 2023
The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj   +1 more source

Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health

Advanced Materials, EarlyView.
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim, Seungwon Yoo, Tae Woog Kang, Yunuo Huang, Woon‐Hong Yeo   +4 more
wiley   +1 more source

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

, 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve
Fei Wu, Meng Zhang, Jian Zhou, Wu, Fei,, Changsheng Xie, Zhang, Meng,, Liu, Weihua,, Yang, Chengmo,, Xie, Changsheng,, Weihua Liu, Zhonghai Lu, Lu, Zhonghai,, Chengmo Yang, Wang, Yu,, Yu Wang, Zhou, Jian,   +15 more
core   +1 more source

Forensics and Anti-Forensics of a NAND Flash Memory: From a Copy-Back Program Perspective

IEEE Access, 2021
This paper proposes a safe copy-back program operation in a NAND flash memory, which is targeting digital forensics for a variety of reasons. Due to the background management operation of the NAND flash memory, the original data is highly likely to ...
Na Young Ahn, Dong Hoon Lee
doaj   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology [PDF]

, 2022
We studied the heavy-ion single event effect response of 3D NAND Flash memory cells with charge-trap based replacement gate technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed.
Gerardin S., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Pesce A.   +6 more
core   +1 more source

Dual Randomness From Spatial and Temporal Variations in Stochastic Zinc Gallate Nanoclusters for PUF and TRNG Co‐Driven Image Generation

Advanced Science, EarlyView.
A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang, Wangmyung Choi, Jueun Lee, Yeong Kwon Kim, Byung Chul Jang, Wonjun Shin, Hocheon Yoo   +6 more
wiley   +1 more source

Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]

, 2009
Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M., Caramia M., Fabiano, Michele, Prinetto, Paolo Ernesto, Di Carlo, Stefano   +4 more
core  

Opposite Trap‐State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory

Advanced Science, EarlyView.
GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee, Won Hee Jeong, Min Kyu Yang, Gun Hwan Kim   +3 more
wiley   +1 more source