Results 31 to 40 of about 29,727 (252)

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

open access: yesApplied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae   +2 more
doaj   +2 more sources

Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review [PDF]

open access: yesBiomimetics
The rapid expansion of data has made global access easier, but it also demands increasing amounts of energy for data storage and processing. In response, neuromorphic electronics, inspired by the functionality of biological neurons and synapses, have ...
Jisung Im   +4 more
doaj   +2 more sources

Architecture and Process Integration Overview of 3D NAND Flash Technologies

open access: yesApplied Sciences, 2021
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee   +3 more
doaj   +1 more source

Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural Networks

open access: yesIEEE Journal of the Electron Devices Society, 2021
A novel design method using unsigned input is proposed for a high-density and parallel synaptic string architecture capable of bit-wise operation and bit-counting utilizing NAND flash memory.
Sung-Tae Lee   +6 more
doaj   +1 more source

Key Technology Practice of High-Speed Access and Research on the Temperature Dependence of Key Time Parameters Based on NAND Flash Memory

open access: yesIEEE Access, 2021
This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end.
Zhuo Hou   +3 more
doaj   +1 more source

Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application

open access: yesAdvanced Intelligent Systems, 2023
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho   +8 more
doaj   +1 more source

Efficient Design of Read Voltages and LDPC Codes in NAND Flash Memory Using Density Evolution

open access: yesIEEE Access, 2023
Low-density parity-check (LDPC) codes play an important role in the reliability enhancement of commercial NAND flash memory. Unfortunately, due to the requirement of the reading speed of NAND flash memory, the LDPC decoder will not obtain precise soft ...
Chatuporn Duangthong   +2 more
doaj   +1 more source

Intrablock Wear Leveling to Counter Layer-to-Layer Endurance Variation of 3-D NAND Flash Memory

open access: yesIEEE Transactions on Electron Devices, 2023
A shift to 3-D NAND technology has resulted in flash memory blocks that include many pages, leading to “big-block” management issues in storage systems. This article experimentally explores endurance variability in 3-D NAND flash memory blocks and finds ...
M. Raquibuzzaman, A. Milenković, B. Ray
semanticscholar   +1 more source

A Cache Policy Based on Request Association Analysis for Reliable NAND-Based Storage Systems

open access: yesApplied Sciences, 2021
Compared with the traditional hard-disk drives (HDDs), solid-state drives (SSDs) have adopted NAND flash memory and become the current popular storage devices.
Chi-Hsiu Su, Chin-Hsien Wu
doaj   +1 more source

Single Event Effects in 3-D NAND Flash Memory Cells With Replacement Gate Technology

open access: yesIEEE Transactions on Nuclear Science, 2023
We studied the heavy-ion single event effect (SEE) response of 3-D NAND flash memory cells with charge-trap (CT)-based replacement gate (RG) technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed. The behavior
M. Bagatin   +6 more
semanticscholar   +1 more source

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