Results 31 to 40 of about 234 (88)
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
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Sensors, 2014 While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash
Min Huang, Zhaoqing Liu, Liyan Qiao
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A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
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Advanced Science, EarlyView.A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Zetong Li +5 more
wiley +1 more source
Applied SciencesThis study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae +2 more
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Investigation of Retention Noise for 3-D TLC NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2019 In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang +3 more
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Triple‐Level Content‐Addressable Vertical NAND Flash Memory
Advanced Science, EarlyView.Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park +8 more
wiley +1 more source
Iterative Pseudo-Soft-Reliability-Based Majority-Logic Decoding for NAND Flash Memory
IEEE Access, 2021 This paper proposes a decoding algorithm for nonbinary low-density parity-check (NB-LDPC) codes, aiming to improve the error rate performance for NAND flash memory. Several NB-LDPC decoding methods for NAND flash memory have been studied. Some approaches
Kyeong Bin Park, Ki-Seok Chung
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Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
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