Channel Modeling and Quantization Design for 3D NAND Flash Memory [PDF]
As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang +5 more
doaj +5 more sources
Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory [PDF]
In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
doaj +3 more sources
3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage [PDF]
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu +6 more
doaj +3 more sources
Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors [PDF]
Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan +6 more
doaj +3 more sources
Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory [PDF]
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go +6 more
doaj +3 more sources
A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli +4 more
doaj +5 more sources
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj +3 more sources
Architecture and Process Integration Overview of 3D NAND Flash Technologies
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee +3 more
doaj +2 more sources
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae +2 more
doaj +2 more sources
Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays [PDF]
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena +4 more
doaj +2 more sources

