Results 41 to 50 of about 4,190 (193)
Applied SciencesThis study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae +2 more
doaj +1 more source
Nonvolatile memory with molecule-engineered tunneling barriers
, 2008 We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion.
Baik S. J. +10 more
core +1 more source
IEEE Access, 2023 To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a method of
Yun-Jae Oh +4 more
doaj +1 more source
Coding scheme for 3D vertical flash memory
, 2015 Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction.
Bandic, Zvonimir +4 more
core +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
Advanced Materials Interfaces, EarlyView.This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
IEEE Journal of the Electron Devices SocietySelf-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu +4 more
doaj +1 more source
Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
Micromachines, 2021 In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed.
Jun-Kyo Jeong +5 more
doaj +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +1 more source