Results 41 to 50 of about 802 (202)

Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer

Nanomaterials, 2023
Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hongsheng Hu, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +8 more
doaj   +1 more source

Impact of Cycling Induced Intercell Trapped Charge on Retention Charge Loss in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2020
As the 3D NAND technology developing toward more and more stack layers, it is essential to shrink the gate length (Lg) and inter-gate space (Ls). However, one of key concerns of scaling Lg/Ls 3D NAND flash is post-cycling data retention characteristics ...
Xinlei Jia, Lei Jin, Wei Hou, Zhiyu Wang, Songmin Jiang, Kaiwei Li, Dejia Huang, Hongtao Liu, Wenzhe Wei, Jianwei Lu, An Zhang, Zongliang Huo   +11 more
doaj   +1 more source

Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata et al., 2007, Lee et al., 2018,
Ting Cheng, Jianquan Jia, Lei Jin, Xinlei Jia, Shiyu Xia, Jianwei Lu, Kaiwei Li, Zhe Luo, Da Li, Hongtao Liu, Qiguang Wang, An Zhang, Daohong Yang, Zongliang Huo   +13 more
doaj   +1 more source

Molecular Design Toward High-Performance Solution-Processable Push-Pull Zinc(II) Porphyrin-Based Resistive Memory Devices: From Binary to Ternary Memory Behavior. [PDF]

Small Sci
A series of zinc(II) porphyrin‐based D−A complexes is employed to fabricate solution‐processable resistive memory devices. The utilization of an electron‐donating π‐bridge or a weak electron‐donating moiety is able to turn on an extra resistive state to realize ternary memory performance, demonstrating the relationship between memory behavior and ...
Kwong KW, Chan H, Leung MY, Hong EY, Lai SL, Yam VW.   +5 more
europepmc   +2 more sources

Characterizing 3D Floating Gate NAND Flash

, 2018
As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory.
Yue Zhu, You Zhou, Fei Wu, Zhonghai Lu, Qin Xiong, Yibing Chu, Changsheng Xie, Ping Huang   +7 more
core   +1 more source

3D-NAND flash memory based neuromorphic computing

Acta Physica Sinica, 2022
A neuromorphic chip is an emerging AI chip. The neuromorphic chip is based on non-Von Neumann architecture, and it simulates the structure and working principle of the human brain. Compared with non-Von Neumann architecture AI chips, the neuromorphic chips have significant improvement of efficiency and energy consumption advantages.
Yang-Yang Chen, Yu-Hui He, Xiang-Shui Miao, Dao-Hong Yang   +3 more
openaire   +1 more source

Flash-Cosmos: In-Flash Bulk Bitwise Operations Using Inherent Computation Capability of NAND Flash Memory

, 2022
International audienceBulk bitwise operations, i.e., bitwise operations on large bit vectors, are prevalent in a wide range of important application domains, including databases, graph processing, genome analysis, cryptography, and hyper-dimensional ...
Park, Jisung, Azizi, Roknoddin, Sadrosadati, Mohammad, Kim, Myungsuk, Mutlu, Onur, Oliveira, Geraldo F., Nadig, Rakesh, Novo, David, Gómez-Luna, Juan   +8 more
core   +2 more sources

3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer

IEEE Access, 2023
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a method of
Yun-Jae Oh, Inyoung Lee, Yunejae Suh, Daewoong Kang, Il Hwan Cho   +4 more
doaj   +1 more source

Satisfiability Attack-resilient Camouflaged Multiple Multivariable Logic-in-Memory Exploiting 3D NAND Flash Array

, 2022
Logic-in-memory implementations have attracted significant attention recently for energy efficient in-situ processing of big data in this era of IoT. However, the emerging memory technologies such as RRAMs, PCMs, STT-MRAMs, etc.
Shubham Sahay (11925383), Ayush Saxena (14097813), Bhogi Satya Swaroop (14097811)   +2 more
core   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source