Results 51 to 60 of about 4,190 (193)

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Computers, 2017
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro S. Spinelli, Christian Monzio Compagnoni, Andrea L. Lacaita   +2 more
doaj   +1 more source

Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights

Advanced Intelligent Systems, EarlyView.
This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song, Changhyeon Han, Joonhyeok Choi, Jongwoo Lee, Hyun‐min Kim, Wongi Hong, Ujin Kim, Sung‐Tae Lee, Daewoong Kwon   +8 more
wiley   +1 more source

Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping

Memories - Materials, Devices, Circuits and Systems, 2023
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta, Abhishek Kumar Upadhyay, Ankur Beohar, Santosh Kumar Vishvakarma   +3 more
doaj   +1 more source

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott, Kamran Eshraghian, Kyoung-rok Cho, Omid Kavehei, Soon-ku Kang, Student Member, Sung-mo Steve Kang   +6 more
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FlashAbacus: A Self-Governing Flash-Based Accelerator for Low-Power Systems

, 2018
Energy efficiency and computing flexibility are some of the primary design constraints of heterogeneous computing. In this paper, we present FlashAbacus, a data-processing accelerator that self-governs heterogeneous kernel executions and data storage ...
Jung, Myoungsoo, Zhang, Jie
core   +1 more source

Keggin‐Type Aluminum Polyoxometalate‐Mediated Oxidation of Amorphous Carbon for Engineered Electrochemical Interfaces

Carbon Energy, EarlyView.
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee, Dongmin Kang, Sumin Hong, Hongjun Park, Myungju Woo, Woojin Jeong, Giha Lee, Junsang Lee, Sangkyun Kim, Jea‐Gun Park, Takamasa Mori, Yehwan Kim, Taeseup Song, Ungyu Paik   +13 more
wiley   +1 more source

Magnetic Field‐Modulated Boolean Logic in Proteinoid‐ Fe3 O4 Hybrid Materials

Advanced Physics Research, Volume 5, Issue 5, May 2026.
Proteinoid‐Fe3O4${\rm Fe}_3{\rm O}_4$. nanoparticle composites exhibit spontaneous electrical oscillations that emulate Boolean logic gates (AND, OR, XOR, NAND, NOR, NOT) under magnetic field modulation. External fields of 65.103 mT tune oscillatory behavior: 84 mT enhances amplitude while 103 mT suppresses it.
Panagiotis Mougkogiannis, Andrew Adamatzky   +1 more
wiley   +1 more source

A Review of Cell Operation Algorithm for 3D NAND Flash Memory

Applied Sciences, 2022
The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based ...
Jong Kyung Park, Sarah Eunkyung Kim
doaj   +1 more source

Analysis and Comparation of SSD and HDD Technologies [PDF]

, 2015
Import 22/07/2015Jedním z faktorů, který limituje efektivní činnost počítačové jednotky, je výkonnost její klíčové součásti – pevného disku (hardwaru). Proto se výzkum v oblasti informačních technologií soustřeďuje na problematiku kapacity, rychlosti a ...
Hansel, Lukáš
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