Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
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What Will Come After V‐NAND—Vertical Resistive Switching Memory? [PDF]
Advanced Electronic Materials, 2019 AbstractThe NAND flash memory serves as the key enabler of the flourishing of portable handheld information devices, such as the cellular phone. The recent upsurge in the sales of vertical NAND flash memory (V‐NAND) entails a further increase in the available information capacity at the edge devices and the servers with higher performance and lower ...
Kyung Jean Yoon, Cheol Seong Hwang
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Numerical Study on the Laser Annealing of Silicon Used in Advanced V-NAND Device. [PDF]
Materials (Basel), 2022 Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this study was to develop the numerical model for the laser melting process of a-Si used in V ...
Son YI, Shin J.
europepmc +3 more sources
IEEE Access, 2023 When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
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Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory [PDF]
Nano ConvergenceVertical NAND (V-NAND) flash memory has emerged as a promising candidate for neuromorphic computing platforms due to its high density, scalability, and reliability.
Sung-Ho Park +11 more
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Concealable physical unclonable functions using vertical NAND flash memory [PDF]
Nature CommunicationsPhysical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory.
Sung-Ho Park +5 more
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Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]
Advanced ScienceMultilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim +12 more
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Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure
IEEE Journal of the Electron Devices SocietyIn this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states.
Seongwoo Kim +3 more
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Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash [PDF]
BiomimeticsIn this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwiho Hwang +3 more
doaj +2 more sources
Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni +2 more
exaly +3 more sources