Results 1 to 10 of about 3,668 (177)

Ferroelectricity-driven strain-mediated magnetoelectric coupling in two-dimensional multiferroic heterostructure. [PDF]

Nat Commun
Cai C, Wen Y, Liang S, Yin L, Cheng R, Wang H, Feng X, Liu L, He J.   +8 more
europepmc   +1 more source

Ferroelectric NAND for efficient hardware bayesian neural networks. [PDF]

Nat Commun
Song M, Koo RH, Kim J, Han CH, Yim J, Ko J, Yoo S, Choe DH, Kim S, Shin W, Kwon D.   +10 more
europepmc   +1 more source

Unveiling the Antimicrobial Potential of Ricinus communis: A Comprehensive Review of Its Relevance to Surgical Site Infection (SSI) Pathogens. [PDF]

Cureus
Arya AK, Kumar G, SIngh V, Afaq N, Shukla S, Singh S, Ratna P, Yadav M, Pandey S, Yadav AN.   +9 more
europepmc   +1 more source

Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors. [PDF]

Nat Commun
Park SH, Jeong MW, Vo NTP, Chang HR, Nguyen TA, Hwang SY, Lee SH, Lee TI, Oh JY.   +8 more
europepmc   +1 more source

Energy-efficient design of CNTFET-based quaternary arithmetic circuits. [PDF]

Sci Rep
Rupani A, Bansal D, Sharma K.
europepmc   +1 more source

Spatially programmable origami networks enable high-density mechanical computing for autonomous robotics. [PDF]

Nat Commun
Hu X, Tan T, Chen Y, Yan Z.
europepmc   +1 more source

Dynamic Modulation of OECT-Based Inverters for In Situ Electrophysiological Monitoring. [PDF]

Adv Sci (Weinh)
Hu G, Cai Q, Liu Z, Zeng R, Feng LW, Chen J, Xiahou S, Huang W.   +7 more
europepmc   +1 more source

A high-performance onboard computing architecture for autonomous satellite mission planning. [PDF]

Sci Rep
Rao J, Zhao W, Ma M, Xue G, Zhang J, Li S, Zhu Y, An J.   +7 more
europepmc   +1 more source

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to planar NAND and is quickly displacing planar NAND in the SSD market, due to its performance, reliability ...
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi   +29 more
  +4 more sources