Results 1 to 10 of about 10,230,919 (179)
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
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What Will Come After V-NAND—Vertical Resistive Switching Memory? [PDF]
Advanced Electronic Materials, 2019 AbstractThe NAND flash memory serves as the key enabler of the flourishing of portable handheld information devices, such as the cellular phone. The recent upsurge in the sales of vertical NAND flash memory (V‐NAND) entails a further increase in the available information capacity at the edge devices and the servers with higher performance and lower ...
Kyung Jean Yoon +2 more
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Dual-Doped Cylindrical Bit-Line Pad for High-Efficiency Bulk Erase in V-NAND Flash
IEEE AccessWe propose a novel dual-doped cylindrical bit-line (DDC-BL) pad structure for vertical NAND (V-NAND) flash memory to enable efficient bulk erase operation through direct hole injection.
Choasub Kim +4 more
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IEEE Access, 2023 When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
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Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure
IEEE Journal of the Electron Devices SocietyIn this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states.
Seongwoo Kim +3 more
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Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Cristian Zambelli +2 more
exaly +3 more sources
Electrical Screening Method of V-NAND Flash Channel Hole Bending Defects [PDF]
International Symposium for Testing and Failure Analysis, 2021 Abstract This paper presents a novel approach for detecting channel hole bending (ChB) defects in vertical NAND flash memory. Such defects are the result of etching process inconsistencies and contribute to data loss and device failure by inducing leakage current between adjacent channel holes.
Dooyeun Jung +10 more
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Machine Learning Based Optimization Technique for High-Capacity V-NAND Flash Memory [PDF]
International Symposium for Testing and Failure Analysis, 2021 Abstract In the NAND flash manufacturing process, thousands of internal electronic fuses (eFuse) are tuned in order to optimize performance and validity. In this paper, we propose a machine learning optimization technique that uses deep learning (DL) and genetic algorithms (GA) to automatically tune eFuse values.
Jisuk Kim +14 more
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Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
IEEE Journal of the Electron Devices Society, 2023 In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility ...
Yuhao Zhu +8 more
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Nanomaterials, 2022 As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu +6 more
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