Results 31 to 40 of about 3,668 (177)
Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories
IEEE Journal of the Electron Devices Society, 2021 The tapered channel effect is a major concern in three-dimensional (3-D) NAND technology because the effect causes differences in the electrical characteristics, including the threshold voltage (VT), between the upper and the lower cells.
Jun Gyu Lee +4 more
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Nanomaterials, 2023 Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hongsheng Hu +8 more
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IEEE Journal of the Electron Devices Society, 2021 For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du +6 more
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Sensors, 2023 Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan +6 more
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Automated Metrology on the Verticality of Cross-Sectioned Channel Hole at V-NAND with Over 200 Layers by Transmission Electron Microscope [PDF]
International Symposium for Testing and Failure Analysis, 2021 Abstract This paper describes the development and implementation of a TEM-based measurement procedure and shows how it is used to determine the verticality or etching angle of channel holes in V-NAND flash with more than 200 layers of memory cells.
Dong-yeob Kim +2 more
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Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
Micromachines, 2023 The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go +6 more
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Match‐line control unit for power and delay reduction in hybrid CAM
IET Circuits, Devices and Systems, 2021 Content addressable memory (CAM) is a hardware search engine utilised for accelerating translation and table look‐up in network routers and data processing systems.
Sheikh Wasmir Hussain +3 more
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Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory
IEEE Access, 2022 Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape.
Inyoung Lee +3 more
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Memories - Materials, Devices, Circuits and Systems, 2023 As the shrinkage of devices accelerates and the vertical layers increase, beam angle spread of carbon ion implantation (C IIP) for the silicon selective epitaxial growth (Si-SEG) areas in V-NAND is one of the most critical parameters related with bin map defects.
Gui-Fu Yang +6 more
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Low-voltage solution-processed Cuprous thiocyanate Thin-Film transistors with NAND logic function
Results in Physics, 2023 Coprous thiocyanate (CuSCN)-based thin-film transistors (TFTs) by solution-processed chitosan electrolyte are fabricated on glass substrates. Such TFTs show a low operation voltage of −2.0 V due to the large specific gate capacitance of 7.65 μF/cm2 ...
Liuhui Lei +7 more
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