Results 31 to 40 of about 9,708,358 (219)

A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories [PDF]

, 2012
In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) NAND Flash memories is evolving fast in an attempt to improve the uncorrected/miscorrected bit error rate (UBER) and to provide a more flexible usage ...
C. Zambelli, P. Olivo, Indaco, Marco, Olivo P., M. Indaco, BERTOZZI, Davide, Zambelli, C., Di Carlo, Stefano, Olivo, P., Bertozzi D., P. Prinetto, D. Bertozzi, M. Fabiano, ZAMBELLI, Cristian, OLIVO, Piero, Fabiano, Michele, Prinetto, Paolo Ernesto, S. Di Carlo, Bertozzi, D., Zambelli C.   +19 more
core   +1 more source

Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology [PDF]

, 2022
We studied the heavy-ion single event effect response of 3D NAND Flash memory cells with charge-trap based replacement gate technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed.
Gerardin S., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Pesce A.   +6 more
core   +1 more source

EDACs and test integration strategies for NAND flash memories [PDF]

, 2010
Mission-critical applications usually presents several critical issues: the required level of dependability of the whole mission always implies to address different and contrasting dimensions and to evaluate the tradeoffs among them. A mass-memory device
Piazza, R., Stefano Di Carlo, Michele Fabiano, Politecnico Di Torino, Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Roberto Piazza, Piazza R., Di Carlo, Stefano   +9 more
core   +1 more source

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Sensors, 2023
Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan, Xuan Tian, Huiting Peng, Yinfeng Shen, Liang Li, Ming Li, Liming Gao   +6 more
doaj   +1 more source

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

Micromachines, 2023
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, Jeong-Soo Lee   +6 more
doaj   +1 more source

Match‐line control unit for power and delay reduction in hybrid CAM

IET Circuits, Devices and Systems, 2021
Content addressable memory (CAM) is a hardware search engine utilised for accelerating translation and table look‐up in network routers and data processing systems.
Sheikh Wasmir Hussain, Telajala Venkata Mahendra, Sandeep Mishra, Anup Dandapat   +3 more
doaj   +1 more source

Memorie Flash a NAND [PDF]

, 2022
In questa tesi verranno trattate le memorie Flash. Partendo da una breve introduzione all'argomento, si studierà prima il funzionamento a livello fisico del transistor, il suo inserimento in un'architettura a NAND e i metodi di accesso e scrittura del ...
Felber, Henry
core  

Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory

IEEE Access, 2022
Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape.
Inyoung Lee, Dae Hwan Kim, Daewoong Kang, Il Hwan Cho   +3 more
doaj   +1 more source

Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory

Memories - Materials, Devices, Circuits and Systems, 2023
As the shrinkage of devices accelerates and the vertical layers increase, beam angle spread of carbon ion implantation (C IIP) for the silicon selective epitaxial growth (Si-SEG) areas in V-NAND is one of the most critical parameters related with bin map defects.
Gui-Fu Yang, Sung-Hwan Jang, SUNG-UK JANG, Tae-Hyun Lee, Da-Hye Kim, Jung-Ho Huh, Seok-Hyun Yoo   +6 more
openaire   +2 more sources

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

IEEE Access, 2021
In charge-trap (CT) three-dimensional (3D) NAND flash memory, the transition layer between Si3N4 CT layer and SiO2 tunneling layer is inevitable, and the defects in the transition layer are expected to cause both lateral and vertical charge loss.
Fei Wang, Yuan Li, Xiaolei Ma, Jiezhi Chen   +3 more
doaj   +1 more source