Ising Solver Using Vertical NAND Flash Memory
Advanced Intelligent SystemsCombinatorial optimization problems are notoriously hard for conventional computers to solve efficiently. While quantum and analog hardware have been explored to tackle these problems, they often face challenges such as high power use, complexity, or ...
Sung‐Ho Park +7 more
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Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory [PDF]
Advanced ScienceThe growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and model integrity.
Sung‐Ho Park +8 more
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Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure
IEEE Journal of the Electron Devices SocietyIn this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states.
Seongwoo Kim +3 more
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Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics [PDF]
Advanced Science, EarlyView.A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Zetong Li +5 more
wiley +2 more sources
Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Cristian Zambelli +2 more
exaly +3 more sources
Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash [PDF]
MicromachinesIn this work, we propose an incremental pulse-width erase (IPWE) scheme for fast and variation-tolerant gate-induced drain leakage (GIDL) erase of 3D NAND flash.
Youngjun Park, Wonbo Shim
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Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory [PDF]
Nano ConvergenceVertical NAND (V-NAND) flash memory has emerged as a promising candidate for neuromorphic computing platforms due to its high density, scalability, and reliability.
Sung-Ho Park +11 more
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Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence [PDF]
Advanced Science, Volume 13, Issue 53, 24 September 2026.Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu +11 more
wiley +2 more sources
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]
Advanced ScienceMultilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim +12 more
doaj +2 more sources
A Low-Power BL Path Design for NAND Flash Based on an Existing NAND Interface
Journal of Low Power Electronics and ApplicationsThis paper is an extended version of a previously reported conference paper regarding a low-power design for NAND Flash. As the number of bits per NAND Flash die increases with cost scaling, the IO data path speed increases to minimize the page access ...
Hikaru Makino, Toru Tanzawa
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