Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
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Numerical Study on the Laser Annealing of Silicon Used in Advanced V-NAND Device. [PDF]
Materials (Basel), 2022 Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this study was to develop the numerical model for the laser melting process of a-Si used in V ...
Son YI, Shin J.
europepmc +3 more sources
IEEE Access, 2023 When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
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Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory [PDF]
Nano ConvergenceCompute-in-memory (CIM) has emerged as a promising solution to mitigate the data movement bottleneck in von Neumann architectures. While vertical NAND (V-NAND) flash memory has been explored for CIM, its structural constraints, including pass-bias ...
Jonghyun Ko +9 more
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Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory [PDF]
Advanced ScienceThe growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and model integrity.
Sung‐Ho Park +8 more
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Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory [PDF]
Nano ConvergenceVertical NAND (V-NAND) flash memory has emerged as a promising candidate for neuromorphic computing platforms due to its high density, scalability, and reliability.
Sung-Ho Park +11 more
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What Will Come After V‐NAND—Vertical Resistive Switching Memory?
Advanced Electronic Materials, 2019 AbstractThe NAND flash memory serves as the key enabler of the flourishing of portable handheld information devices, such as the cellular phone. The recent upsurge in the sales of vertical NAND flash memory (V‐NAND) entails a further increase in the available information capacity at the edge devices and the servers with higher performance and lower ...
Kyung Jean Yoon +2 more
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Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash [PDF]
MicromachinesIn this work, we propose an incremental pulse-width erase (IPWE) scheme for fast and variation-tolerant gate-induced drain leakage (GIDL) erase of 3D NAND flash.
Youngjun Park, Wonbo Shim
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Concealable physical unclonable functions using vertical NAND flash memory [PDF]
Nature CommunicationsPhysical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory.
Sung-Ho Park +5 more
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Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]
Advanced ScienceMultilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim +12 more
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