Channel Modeling and Quantization Design for 3D NAND Flash Memory [PDF]
Entropy, 2023 As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang +5 more
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Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory [PDF]
Micromachines, 2021 In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
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3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage [PDF]
Nanomaterials, 2022 As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu +6 more
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Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash [PDF]
Micromachines, 2023 The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash.
Tao Yang +4 more
doaj +2 more sources
Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories [PDF]
Micromachines, 2021 Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen +6 more
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Architecture and Process Integration Overview of 3D NAND Flash Technologies
Applied Sciences (Switzerland), 2021 In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Sungmin Hwang, Junsu Yu, Hyungjin Kim
exaly +3 more sources
A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]
Micromachines, 2021 Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli +4 more
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Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors [PDF]
Sensors, 2023 Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan +6 more
doaj +2 more sources
Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash [PDF]
Micromachines, 2023 The bit density is generally increased by stacking more layers in 3D NAND Flash. Lowering dopant activation of select transistors results from complex integrated processes.
Tao Yang +8 more
doaj +2 more sources
Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation. [PDF]
SmallPhysical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwang H, Youn S, Park J, Yu D, Kim H.
europepmc +2 more sources