Results 1 to 10 of about 696 (160)
Architectural and Integration Options for 3D NAND Flash Memories [PDF]
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni +2 more
exaly +7 more sources
3D NAND Flash Based on Planar Cells [PDF]
Computers, 2017 In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
exaly +5 more sources
Architecture and Process Integration Overview of 3D NAND Flash Technologies
Applied Sciences (Switzerland), 2021 In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee, Sungmin Hwang, Junsu Yu
exaly +4 more sources
Channel Modeling and Quantization Design for 3D NAND Flash Memory
Entropy, 2023 As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang +5 more
doaj +4 more sources
Characterizing 3D Floating Gate NAND Flash
ACM Transactions on Storage, 2018 As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory.
Qin Xiong, Fei Wu, Zhonghai Lu
exaly +3 more sources
A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]
Micromachines, 2021 Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli +4 more
doaj +5 more sources
Micromachines, 2021 In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
doaj +2 more sources
Random Telegraph Noise in 3D NAND Flash Memories [PDF]
Micromachines, 2021 In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli +3 more
doaj +3 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro S Spinelli +2 more
exaly +3 more sources
Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash
Micromachines, 2023 The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash.
Tao Yang +4 more
doaj +2 more sources