Results 21 to 30 of about 1,894,725 (194)

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

2021 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve the reliability and performance taking a threshold voltage (V th ) distribution model as the ...
Weihua Liu, Fei Wu 0005, Jian Zhou 0004, Meng Zhang 0014, Chengmo Yang, Zhonghai Lu, Yu Wang 0168, Changsheng Xie 0001   +7 more
openaire   +2 more sources

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash [PDF]

Biomimetics
In this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwiho Hwang, Gyeonghae Kim, Dayeon Yu, Hyungjin Kim   +3 more
doaj   +2 more sources

Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence [PDF]

Advanced Science, Volume 13, Issue 59, 23 October 2026.
We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang, Fanyi Meng, Fanying Meng, Shida Huo, Junxi Xu, Yaohui Wang, Yuexuan Ma, Yuan Xie, Xiaodong Hu, Caofeng Pan, Enxiu Wu   +10 more
wiley   +2 more sources

Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash [PDF]

Micromachines
In this work, we propose an incremental pulse-width erase (IPWE) scheme for fast and variation-tolerant gate-induced drain leakage (GIDL) erase of 3D NAND flash.
Youngjun Park, Wonbo Shim
doaj   +2 more sources

Reliability of 3D NAND Flash Memories

, 2016
In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro, ZAMBELLI, Cristian, OLIVO, Piero   +2 more
openaire   +2 more sources

Analysis of HBM Failure in 3D NAND Flash Memory

Electronics, 2022
Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper. A catastrophic burn-out failure during HBM zapping is first presented. Analysis shows that NMOS fingers’
Song, Biruo, Li, Zhiguo, Wang, Xin, Fu, Xiang, Liu, Fei, Jin, Lei, Huo, Zongliang   +6 more
openaire   +2 more sources

Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics [PDF]

Advanced Science, Volume 13, Issue 61, 3 November 2026.
A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Zetong Li, Wei He, Guangji Wang, Jingwei Zhang, Zhimin Chai, Xinchun Lu   +5 more
wiley   +2 more sources

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +2 more sources

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

Applied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae, Seul Ki Hong, Jong Kyung Park   +2 more
doaj   +2 more sources

Silicon-Richness Impact for Enhanced Charge-Trapping in 3-D NAND Flash Memories

IEEE Journal of the Electron Devices Society
We propose an optimization of N/Si ratio of charge trap silicon nitride (CT-SiN) for 3D NAND flash memory applications. By resorting to density functional theory (DFT) calculations and experimental analyses, we studied the properties influencing SiN ...
Tomoya Nagahashi, Atsushi Oshiyama, Mauro Boero, Hajime Karasawa, Ryota Horiike, Kenji Shiraishi   +5 more
doaj   +2 more sources