Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Cristian Zambelli +2 more
exaly +4 more sources
3D NAND Flash Based on Planar Cells
Computers, 2017 In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
exaly +4 more sources
Random Telegraph Noise in 3D NAND Flash Memories [PDF]
Micromachines, 2021 In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli +3 more
doaj +2 more sources
Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory [PDF]
Micromachines, 2023 The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go +6 more
doaj +2 more sources
Light-Absorbing-Layer-Free Flash Lamp Annealing for High-Throughput Fabrication of All-Solution-Processed Oxide Electronics. [PDF]
Adv Sci (Weinh)A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Li Z +5 more
europepmc +2 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Christian Monzio Compagnoni +2 more
exaly +3 more sources
Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash [PDF]
BiomimeticsIn this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwiho Hwang +3 more
doaj +2 more sources
Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash [PDF]
MicromachinesIn this work, we propose an incremental pulse-width erase (IPWE) scheme for fast and variation-tolerant gate-induced drain leakage (GIDL) erase of 3D NAND flash.
Youngjun Park, Wonbo Shim
doaj +2 more sources
A Unified Flash Memory Platform for Mode-Adaptive and Robust AI Computation. [PDF]
Adv Sci (Weinh)A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Yu D +6 more
europepmc +2 more sources
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj +2 more sources